Mini-circuits - GVA-63+

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: METAL; Technology: GAAS; Power Supplies (V): 7;

WIDE BAND LOW POWER; Minimum Operating Frequency: 1000 MHz; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; JESD-609 Code: e3;

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 0 MHz;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Screening Level: IEC-61249-2-21;

TQP3M9008 by Qorvo is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Ideal for RF applications requiring high performance in plastic/epoxy package.

Broadcom's MGA-61563-TR1G is a GAAS RF amplifier with 6.9 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 18 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3-5V with a supply current of 48 mA.

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

SST12LP08-QXBE by Microchip is a RF amplifier with 29 dB gain, operating frequency range of 2412-2484 MHz, and 5 dBm max input power. It is designed for narrow band medium power applications, featuring a 50 ohm characteristic impedance and surface mounting feature.

The NXP Semiconductors BGU8103 is a narrow band low power RF amplifier with a gain of 14.5 dB. It operates at frequencies b/w 1559 MHz and 1610 MHz, making it suitable for applications in the RF and microwave field. Its compact surface mount package and low power consumption of 1.6 mA make it an ideal choice for various wireless communication systems.

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.

HMC311SC70E by Analog Devices is a GAAS RF amplifier with 11 dB gain, operating from 0 to 8000 MHz. It has a max input power of 10 dBm and operates on a 5V supply with a current draw of 74 mA. Ideal for wideband low-power applications requiring surface mount installation in temperatures ranging from -40 to 85°C.

HMC462LP5 by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 2-20 GHz, handles up to 18 dBm input power, and has a max temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact surface mount package.

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;