Analog Devices - AD8350ARMZ15-REEL7

  1. Home
  2. Analog Devices - AD8350ARMZ15-REEL7
AD8350ARMZ15-REEL7 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number AD8350ARMZ15-REEL7
Description WIDE BAND MEDIUM POWER; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Characteristic Impedance: 200 ohm; Maximum Input Power (CW): 8 dBm;
Datasheet AD8350ARMZ15-REEL7 Datasheet
In Stock5,109
NAME DESCRIPTION
Other Names: -2735-AD8350ARMZ15-REEL7TR-ND
AD8350ARMZ15-REEL7DKR
-2735-AD8350ARMZ15-REEL7CT
AD8350ARMZ15-REEL7TR
-2735-AD8350ARMZ15-REEL7TR
AD8350ARMZ15-REEL7CT
AD8350ARMZ15REEL7
2156-AD8350ARMZ15-REEL7
AD8350ARMZ15-REEL7-ND
ANAANAAD8350ARMZ15-REEL7
-2735-AD8350ARMZ15-REEL7DKR
Construction: COMPONENT
Maximum Input Power (CW): 8 dBm
Characteristic Impedance: 200 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Gain: 14 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
5,109 - -

Popular Products

Category Top Products

HMC441LP3TR by Hittite Microwave

HMC441LP3TR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;
SBF-4089Z by Qorvo

SBF-4089Z

Qorvo

Qorvo's SBF-4089Z is a GAAS RF amplifier with 13.2 dB gain, operating from 0 to 500 MHz. It has a max input power of 19 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with matte tin terminals.
HMC797LP5ETR by Analog Devices

HMC797LP5ETR

Analog Devices

Analog Devices' HMC797LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating b/w -55°C to 85°C. It has a power supply of 10V and max current of 440mA. Ideal for wide band medium power applications, it features a surface mount package body made of plastic/epoxy.
BGU8103X by NXP Semiconductors

BGU8103X

NXP Semiconductors

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.
MGA-30889-BLKG by Broadcom

MGA-30889-BLKG

Broadcom

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.
HMC327MS8G by Hittite Microwave

HMC327MS8G

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
LEE-39 by Mini-circuits

LEE-39

Mini-circuits

Mini-circuits LEE-39 is a wide band low power RF amplifier with 18.5 dB gain, handling up to 13 dBm CW input power. Featuring a VSWR of 1.6, it operates from -40°C to 85°C, making it ideal for various RF and microwave applications up to 8 GHz.
BGM1013,115 by NXP Semiconductors

BGM1013,115

NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.
HMC8411LP2FETR by Analog Devices

HMC8411LP2FETR

Analog Devices

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.
GALI-2 by Mini-circuits

GALI-2

Mini-circuits

GALI-2 by Mini-circuits is a wideband low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 0 to 8000 MHz, handling up to 15 dBm CW input power. Ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45°C to 85°C.
HELA-10B by Mini-circuits

HELA-10B

Mini-circuits

HELA-10B by Mini-circuits is a wide band medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.22, making it suitable for various RF and microwave applications requiring high performance amplification in a compact form factor.
HMC462 by Analog Devices

HMC462

Analog Devices

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.
HMC8411TCPZ-EP-PT by Analog Devices

HMC8411TCPZ-EP-PT

Analog Devices

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
HMC1053 by Hittite Microwave

HMC1053

Hittite Microwave

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;
HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.
CMPA601C025D by Wolfspeed

CMPA601C025D

Wolfspeed

WIDE BAND HIGH POWER;
HMC-AUH312 by Hittite Microwave

HMC-AUH312

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 65000 MHz; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 500 MHz; Minimum Operating Temperature: 0 Cel;
HMC1121LP6GE by Analog Devices

HMC1121LP6GE

Analog Devices

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.
HMC8413LP2FE by Analog Devices

HMC8413LP2FE

Analog Devices

HMC8413LP2FE by Analog Devices is a PHEMT RF amplifier with 17 dB gain, operating from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, suitable for wideband medium power applications. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it is ideal for RF and microwave systems requiring high performance in a small form factor.
HMC636ST89 by Analog Devices

HMC636ST89

Analog Devices

HMC636ST89 by Analog Devices is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications, this component is designed for surface mounting in RF and microwave systems.