48 RF & Microwave Amplifiers 6

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Additional Features	Minimum Operating Frequency	Maximum Operating Frequency
CGY2021G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS	2 dBm		COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	34 dB	-20 Cel	IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ	1710 MHz	1785 MHz
CGY2011G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS	1.5 dBm		COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel		880 MHz	915 MHz
CGY2023G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS	2 dBm		COMPONENT	3.3	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel		1710 MHz	1785 MHz
CGY2013G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS	2 dBm	3 mA	COMPONENT	3.3	QFP48,.35SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	35.5 dB	-20 Cel	LOW NOISE	880 MHz	915 MHz
CGY2010G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS	1.5 dBm		COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel		880 MHz	915 MHz
CGY2020G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS	2 dBm	1.3 mA	COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel		1710 MHz	1785 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.