NXP Semiconductors - CGY2013G

WIDE BAND LOW POWER; Maximum Operating Frequency: 28000 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e4; Maximum Input Power (CW): -5 dBm; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC516 is a GAAS RF amplifier with 18dB gain, operating from 7-17GHz. It has a max input power of 5dBm and requires a 3V supply, drawing 88mA. Ideal for wideband low-power applications in RF & microwave systems due to its high performance and gold terminal finish.

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 1.2; Minimum Operating Frequency: 100 MHz;

HMC441LP3TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handles up to 15 dBm CW input power, and draws a max of 115 mA at 5 V supply. This component is ideal for RF and microwave applications requiring surface mount construction in the -40°C to +85°C temperature range.

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.

WIDE BAND HIGH POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1500 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm; Gain: 19 dB;

WIDE BAND HIGH POWER;

Mitsubishi Electric's RA35H1516M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 154-162 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and supports power supplies of 5V and 12.5V.

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;

HELA-10D by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, handling up to 20 dBm CW input power. It operates b/w 8-300 MHz frequencies with VSWR of 1.2, suitable for various RF and microwave applications requiring a 50 ohm impedance.

ADL5536ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 18.1 dB gain, suitable for frequencies ranging from 20 MHz to 1000 MHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within the specified frequency range.

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.

NARROW BAND LOW POWER;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;

Qorvo's SBB2089ZSR is a wide band low power RF amplifier with 18.5 dB gain, suitable for frequencies ranging from 50 MHz to 850 MHz. It operates at temperatures b/w -40°C to 85°C and can handle a max input power of 24 dBm. This component is ideal for applications requiring high performance in RF and microwave systems.