Qorvo - CMD317C4

Analog Devices' HMC561LP3E is a wide band low power RF amplifier with 16 terminals, operating from 8-21 GHz. It offers a max input power of 10 dBm, suitable for applications requiring RF amplification in the frequency range. The component is constructed using GaAs technology and can operate b/w -40 to 85°C, making it ideal for various RF and microwave applications.

HMC794LP3E by Analog Devices is a wide band low power RF amplifier with a max operating frequency of 2 GHz and characteristic impedance of 50 ohm. It can handle up to 13 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperature range from -40°C to 85°C.

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

The NXP Semiconductors MHT2012NT1 is a RF amplifier with 29.7 dB gain, operating b/w 2400-2500 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications in the RF & Microwave field. The component is constructed with plastic/epoxy material and features surface mounting for ease of installation.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 5 dBm;

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 2.1; Gain: 9.2 dB; Maximum Operating Frequency: 6000 MHz;

WIDE BAND HIGH POWER;

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;

CA70-2 by M/a-com Technology Solutions is a wide band low power RF amplifier with 7 dB gain. It operates b/w 10-250 MHz, handling up to 13 dBm CW input power. With a VSWR of 2.1, it's ideal for applications requiring coaxial construction in temperatures ranging from 0-50°C.

Analog Devices' MAX2643EXT+T is a wide band low power RF amplifier with 14.5 dB gain, operating from 800-1000 MHz. It can handle up to 5 dBm input power, with an operating temperature range of -40 to 85°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; JESD-609 Code: e3;

NARROW BAND MEDIUM POWER; Gain: 16.5 dB; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

NXP Semiconductors' MW7IC2725NBR1 is a 50 ohm RF amplifier with 25.5 dB gain, operating from 2300-2700 MHz. It can handle up to 22 dBm CW input power and has a VSWR of 10, making it ideal for narrowband high-power applications in RF and microwave systems.

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.