Hittite Microwave - HMC794LP3ETR

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.

HMC462LP5E by Analog Devices is a wide band low power RF amplifier with 10 dB gain. It operates from 2-20 GHz, handling up to 18 dBm CW input power. This component, made of GaAs technology, is ideal for RF and microwave applications requiring surface mounting features.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10.5 dB;

Analog Devices' HMC441LC3BTR-R5 is a wide band low power RF amplifier with 10 dB gain and 15 dBm max input power. Operating from 6-18 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

WIDE BAND LOW POWER;

Analog Devices' HMC460LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;

WIDE BAND LOW POWER;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 20 dBm;

Analog Devices' HMC608LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and max current of 350mA, suitable for wideband medium-power applications in surface-mount setups.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

Qorvo's TGA4521 is a GaAs RF amplifier with 16dB gain, operating from 32-45 GHz. It handles up to 20 dBm CW input power and requires a 6V supply. Ideal for wideband medium-power applications in RF and microwave systems.

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.

Analog Devices' HMC1040CHIPS is a wide band low power RF amplifier with 19 dB gain, suitable for frequencies ranging from 20-44 GHz. It can handle up to 5 dBm CW input power and operates in temperatures from -55 to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

The Mini-circuits LEE-39+ is a wide band low power RF amplifier with 18.5 dB gain, operating from 0 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.