Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rf Micro Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
1.2 |
39 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19.5 dB |
-40 Cel |
LOW NOISE |
0 MHz |
5000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
300 MHz |
3000 MHz |
||||||||
Broadcom |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
51 mA |
3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE, HIGH RELIABILITY |
e3 |
100 MHz |
6000 MHz |
||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.2 |
90 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3400 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 dBm |
1.5 |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
26 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
39 mA |
COMPONENT |
2.6 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
0 MHz |
5500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
82 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
82 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
AEC-Q100 |
1 |
5.6 mA |
1.8/3.3 |
SOLCC6,.04,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
AEC-Q100 |
1 |
10 dBm |
5.6 mA |
COMPONENT |
1.8/3 |
SOLCC6,.04,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
|||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
22.7 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
|||||||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
10 |
7 mA |
COMPONENT |
3.3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
5 MHz |
2000 MHz |
|||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
29 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
30 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
1000 MHz |
||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
23.2 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.43 |
COMPONENT |
1.8/2.85 |
SOLCC6,.04,20 |
50 ohm |
150 Cel |
17.5 dB |
1559 MHz |
1610 MHz |
||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.78 |
1.6 mA |
COMPONENT |
0.8,1.8/2.85 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
1559 MHz |
1610 MHz |
|||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
15 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
300 MHz |
3000 MHz |
||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.3 |
20 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
800 MHz |
6000 MHz |
||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 mA |
COMPONENT |
3 |
SOLCC6,.08,20 |
RF/Microwave Amplifiers |
85 Cel |
4 dB |
-40 Cel |
TIN |
e3 |
40 MHz |
4000 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
21 mA |
3 |
SOLCC6,.08,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
|||||||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
70 Cel |
-10 Cel |
Tin (Sn) |
e3 |
|||||||||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
20 dBm |
1.67 |
38 mA |
COMPONENT |
3.3 |
TSSOP6,.08 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
TIN |
e3 |
40 MHz |
1000 MHz |
|||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
|||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
23 mA |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.1 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
23 mA |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
5000 MHz |
||||||
|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
10 dBm |
COMPONENT |
3 |
SOLCC6,.06,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
4900 MHz |
5900 MHz |
||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.4 |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
3500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PHEMT |
1 |
32 dBm |
1.43 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
25 MHz |
12000 MHz |
||||||||||
|
Wolfspeed |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
6 |
CERAMIC |
PHEMT |
1 |
3 |
1000 mA |
COMPONENT |
28 |
50 ohm |
105 Cel |
31 dB |
-40 Cel |
5200 MHz |
5900 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
10000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
SOLCC6,.08,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
4.5 |
200 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
17 dB |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
|||||||
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5.4 mA |
3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
0 dBm |
1.22 |
14.4 mA |
COMPONENT |
1.8 |
SOLCC6,.04,20 |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
1559 MHz |
1610 MHz |
|||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
22.2 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
21.1 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
20.1 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
||||||
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
1.8/2.85 |
SOLCC6,.04,16 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
||||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.22 |
6.6 mA |
COMPONENT |
0.8/1.8,2.8 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
728 MHz |
960 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.2 |
28 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.2 |
90 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3400 MHz |
||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
1.2 |
101 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.7 |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.7 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
||||||
|
Skyworks Solutions |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
BICMOS |
1 |
10 dBm |
1.92 |
4.5 mA |
COMPONENT |
1.8/2.85 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
1559 MHz |
1606 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.