6 RF & Microwave Amplifiers 527

Reset All

Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGA925L6	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	0 dBm			COMPONENT	1.8	SOLCC6,.03,16	50 ohm	RF/Microwave Amplifiers	85 Cel	15.8 dB	-40 Cel				1550 MHz	1615 MHz
BGA628L7	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	6 dBm			COMPONENT	2.75	SOLCC6,.05,20	50 ohm	RF/Microwave Amplifiers	150 Cel	10 dB	65 Cel				400 MHz	6000 MHz
BGA430	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB	-65 Cel				900 MHz	2150 MHz
BGA428-E6327	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					2.7	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGA713L7-E6327	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					2.8	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel		-30 Cel	Gold (Au)		e4
BGA461-E6327	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					2.8	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel		-30 Cel
BGA615L7	Infineon Technologies	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	10 dBm		.003 mA	COMPONENT	2.8	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-30 Cel		LOW NOISE
BGA915N7	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	0 dBm		5.7 mA	COMPONENT	2.8	SOLCC6,.06,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.3 dB	-40 Cel				1550 MHz	1615 MHz
BGA428-E6433	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					2.7	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGA425	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		-10 dBm		9.5 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	18.5 dB	-65 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	1800 MHz
BGB719N7ESD	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1			3.2 mA	COMPONENT	3	SOLCC6,.05,20	50 ohm	RF/Microwave Amplifiers		13 dB					10 MHz	1000 MHz
BGA751L7-E6327	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					2.8	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel		-30 Cel	Gold (Au)		e4
BGB717L7ESD	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1			3.6 mA	COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		10 dB					76 MHz	108 MHz
BGA758L7	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	0 dBm		9 mA	COMPONENT	3.3	SOLCC6,.05,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-30 Cel				5000 MHz	6000 MHz
BGA715L7	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	10 dBm			COMPONENT	1.8	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN	LOW NOISE	e3
CGY121A	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS					COMPONENT	-4	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16.5 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
CGY121B	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS					COMPONENT	-4	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19.5 dB		Tin/Lead (Sn/Pb)		e0	800 MHz	2500 MHz
BGA231L7-E6327	Infineon Technologies		SURFACE MOUNT	6	PLASTIC/EPOXY		1					1.8/2.8	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Gold (Au)		e4
BGA855N6E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	25 dBm	1.22	6.4 mA	COMPONENT	1.2/2.8	SOLCC6,.03,16	50 ohm		85 Cel	16.9 dB	-40 Cel				1164 MHz	1300 MHz
BGA855N6	Infineon Technologies	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	25 dBm	1.22	6.4 mA	COMPONENT	1.2/2.8	SOLCC6,.03,16	50 ohm		85 Cel	16.9 dB	-40 Cel				1164 MHz	1300 MHz
MAX2654EXT-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		9.2 mA	COMPONENT	2.7/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12.7 dB	-40 Cel	TIN LEAD		e0	1400 MHz	1700 MHz
MAX2633EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25		COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2649EBT-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	5 dBm		20 mA	COMPONENT	3/3.3	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	4900 MHz	5900 MHz
MAX2640EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	TIN LEAD		e0	400 MHz	1500 MHz
MAX2656EXT-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		15.2 mA	COMPONENT	2.7/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	TIN LEAD		e0	1800 MHz	2000 MHz
MAX2655EXT-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		11.1 mA	COMPONENT	2.7/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	TIN LEAD		e0	1400 MHz	1700 MHz
MAX2633EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2648EBT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6		BIPOLAR		15 dBm		18 mA	COMPONENT	3/3.3	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	5000 MHz	6000 MHz
MAX2374EBT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	10 dBm	10	10.5 mA	COMPONENT	3/5	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	750 MHz	1000 MHz
MAX2649EBT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	5 dBm		20 mA	COMPONENT	3/3.3	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	4900 MHz	5900 MHz
MAX2644EXT-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2648EBT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6		BIPOLAR		15 dBm		18 mA	COMPONENT	3/3.3	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	5000 MHz	6000 MHz
MAX2641EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	1400 MHz	2500 MHz
MAX2644EXT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
MAX2641EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD		e0	1400 MHz	2500 MHz
MAX2656EXT+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		15.2 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Matte Tin (Sn)		e3	1800 MHz	2000 MHz
MAX2654EXT+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		9.2 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12.7 dB	-40 Cel	NICKEL GOLD PALLADIUM			1400 MHz	1700 MHz
S-AU81	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	CERAMIC		1					3.6	DILCC6,.25,67		RF/Microwave Amplifiers	60 Cel		-20 Cel
TA4012AFE(TE85L)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			8.5 mA		2	TSSOP6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4012FU	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				8.5 mA	COMPONENT	2	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4016AFE(TE85L)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			8 mA		2	TSSOP6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
TA4008F	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			2.5	12 mA	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1640 MHz	1700 MHz
TA4000F(TE85L,F)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			15 mA		5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
S9751A	Toshiba	NARROW BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1900 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
S9751B	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1500 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
TA4011FU(TE85L)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4013FU	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				14 mA	COMPONENT	2	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
S9747	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				350 mA		6	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.