Toshiba - S9747

  1. Home
  2. Toshiba - S9747
S9747 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S9747
Description NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: FL6,.4,100;
Datasheet S9747 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Terminals: 6
Package Equivalence Code: FL6,.4,100
Technology: GAAS
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 350 mA
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Power Supplies (V): 6
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MGA-61563-TR1G by Broadcom

MGA-61563-TR1G

Broadcom

Broadcom's MGA-61563-TR1G is a GAAS RF amplifier with 6.9 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 18 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3-5V with a supply current of 48 mA.
HMC752LC4TR by Analog Devices

HMC752LC4TR

Analog Devices

Analog Devices' HMC752LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It offers wideband low power performance at 3V supply, ideal for surface mount applications in RF and microwave systems.
RF6886SR by Rf Micro Devices

RF6886SR

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 12 dBm;
BGM1013 by NXP Semiconductors

BGM1013

NXP Semiconductors

The NXP Semiconductors BGM1013 is a wide band low power RF amplifier with 24 dB gain. It operates from 100 MHz to 3000 MHz, with -10 dBm CW input power and 5V supply voltage. Ideal for applications requiring surface mount components in RF & microwave systems.
MAX2630EUS+T by Maxim Integrated

MAX2630EUS+T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.25;
SP9711 by Amplifonix

SP9711

Amplifonix

WIDE BAND LOW POWER; Minimum Operating Frequency: 1000 MHz; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT;
HMC960LP4ETR by Hittite Microwave

HMC960LP4ETR

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Additional Features: LOW NOISE;
HMC441LP3 by Hittite Microwave

HMC441LP3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 6500 MHz;
ERA-50SM by Mini-circuits

ERA-50SM

Mini-circuits

ERA-50SM by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring surface mount construction.
MMZ09312BT1 by Freescale Semiconductor

MMZ09312BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
HMC342LC4TR by Analog Devices

HMC342LC4TR

Analog Devices

HMC342LC4TR by Analog Devices is a wide band low power RF amplifier with 1 function and 24 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V. This ceramic package surface mount device is suitable for RF and microwave applications.
NBB-310-T1 by Rf Micro Devices

NBB-310-T1

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Gain: 9 dB;
CA70-2 by M/a-com Technology Solutions

CA70-2

M/a-com Technology Solutions

CA70-2 by M/a-com Technology Solutions is a wide band low power RF amplifier with 7 dB gain. It operates b/w 10-250 MHz, handling up to 13 dBm CW input power. With a VSWR of 2.1, it's ideal for applications requiring coaxial construction in temperatures ranging from 0-50°C.
A64 by TE Connectivity

A64

TE Connectivity

TE Connectivity's A64 is a RF & Microwave Amplifier with a metal package body. It operates at temperatures ranging from 0 to 50 °C and requires a power supply of 15V. With 4 terminals and a max supply current of 38mA, it is suitable for various applications in the field of RF and microwave amplification.
CMPA801B025F by Wolfspeed

CMPA801B025F

Wolfspeed

RF/Microwave Amplifiers;
HMC429LP4E by Hittite Microwave

HMC429LP4E

Hittite Microwave

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;
MSA-1105-STRG by Broadcom

MSA-1105-STRG

Broadcom

Broadcom's MSA-1105-STRG is a RF & Microwave Amplifier with 10dB gain, operating from 50MHz to 1300MHz. Featuring a max input power of 13dBm and VSWR of 1.7, it is ideal for wideband low-power applications requiring a characteristic impedance of 50Ω.
SKY67153-396LF by Skyworks Solutions

SKY67153-396LF

Skyworks Solutions

SKY67153-396LF by Skyworks Solutions is a wide band low power RF amplifier with 14.5 dB gain and 50 ohm impedance. It operates from 700 MHz to 3800 MHz, handling up to 21 dBm CW input power. Ideal for applications requiring high frequency amplification in temperatures ranging from -40°C to 105°C.
MAAM28000-A1G by M/a-com

MAAM28000-A1G

M/a-com

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -55 Cel;
MAX9931EUA+T by Maxim Integrated

MAX9931EUA+T

Maxim Integrated

MAX9931EUA+T by Maxim Integrated is a wide band low power RF amplifier with 50 ohm impedance. It operates from 2 MHz to 1600 MHz, handling up to 16 dBm CW input power. Ideal for RF and microwave applications, it has a temperature range of -40°C to 85°C.