Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
8 dBm |
95 mA |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.2 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
18000 MHz |
31000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
1 |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
26500 MHz |
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Texas Instruments |
WIDE BAND MEDIUM POWER |
6 |
CERAMIC |
GAAS |
1.5 |
COMPONENT |
9 |
MODULE,6LEAD,.45 |
RF/Microwave Amplifiers |
150 Cel |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
25 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
18000 MHz |
44000 MHz |
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|
Analog Devices |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
0 dBm |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
GOLD OVER NICKEL |
LOW NOISE |
e4 |
13000 MHz |
25000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
1 |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
26500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
5/8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
e4 |
|||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
17500 MHz |
25500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
15 dBm |
220 mA |
COMPONENT |
6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
2000 MHz |
4000 MHz |
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|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
75 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
115 mA |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
80 mA |
5 |
LCC12,.25SQ |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
21 dBm |
COMPONENT |
6 |
LCC16,.24SQ,40/32 |
50 ohm |
150 Cel |
24 dB |
-65 Cel |
37000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
20 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
GOLD OVER NICKEL |
e4 |
2000 MHz |
18000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
4 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
GOLD OVER NICKEL |
e4 |
|||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
2 dBm |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
17000 MHz |
26000 MHz |
|||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
32 |
CERAMIC |
BIPOLAR |
1 |
95 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
130 mA |
5/6 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
GOLD |
e4 |
|||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
21 dBm |
COMPONENT |
6 |
LCC16,.24SQ,40/32 |
50 ohm |
150 Cel |
24 dB |
-65 Cel |
37000 MHz |
40000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
95 mA |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
PHEMT |
1 |
23 dBm |
750 mA |
COMPONENT |
6 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
23 dB |
-40 Cel |
24000 MHz |
27000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
23 dBm |
80 mA |
COMPONENT |
5 |
LCC12,.25SQ |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
GOLD |
HIGH RELIABILITY |
e4 |
2000 MHz |
20000 MHz |
|||||
|
Analog Devices |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
-5 dBm |
90 mA |
COMPONENT |
4 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
17000 MHz |
27000 MHz |
|||||||
|
Analog Devices |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
115 mA |
5 |
LCC12,.2SQ |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
1 |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
30 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
350 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
95 mA |
COMPONENT |
3.5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
7500 MHz |
26500 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
1 |
10 dBm |
COMPONENT |
2 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
5000 MHz |
||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
5 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
3 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
1 |
3 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
17 dBm |
7 |
COMPONENT |
10 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
40000 MHz |
|||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
4 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
17 dBm |
7 |
COMPONENT |
10 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
40000 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
4 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
5500 MHz |
17000 MHz |
|||||||
NXP Semiconductors |
SURFACE MOUNT |
10 |
CERAMIC |
HYBRID |
12 |
GWDIP10,.75 |
RF/Microwave Amplifiers |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
CERAMIC |
HYBRID |
1 |
20.79 dBm |
2 |
MODULE |
5,26 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
90 Cel |
29 dB |
-10 Cel |
1805 MHz |
1880 MHz |
|||||||||||
NXP Semiconductors |
SURFACE MOUNT |
4 |
CERAMIC |
HYBRID |
4.8 |
SMSIP4,4GNDFLNG |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
4 |
CERAMIC |
HYBRID |
8.5 dBm |
2 |
MODULE |
6 |
SMSIP4,4GNDFLNG |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
32.5 dB |
-30 Cel |
880 MHz |
915 MHz |
||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
CERAMIC |
HYBRID |
1 |
10 dBm |
8 |
COMPONENT |
3.5 |
SOT-482C |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
1710 MHz |
1785 MHz |
||||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
CERAMIC |
1 |
20.79 dBm |
1.6 |
MODULE |
5,26 |
FLNG,1.6"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
90 Cel |
24 dB |
-10 Cel |
1805 MHz |
1880 MHz |
||||||||||||
NXP Semiconductors |
SURFACE MOUNT |
4 |
CERAMIC |
HYBRID |
4.8 |
SMSIP4,4GNDFLNG |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.