CERAMIC RF & Microwave Amplifiers 255

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY1916	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC	HYBRID	3	20.79 dBm	1.6		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	24 dB	-10 Cel				1930 MHz	1990 MHz
BGY282	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	12	CERAMIC	HYBRID	2	10 dBm	3		COMPONENT	3.5	LCC12(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
PTMA180402ELV1	Infineon Technologies	NARROW BAND HIGH POWER			CERAMIC		1					28	FLNG,.59"H.SPACE		RF/Microwave Amplifiers
CGY41S	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGY41ES	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
PTMA210452FLV1	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC		1					28	MODULE,8LEAD,.6		RF/Microwave Amplifiers
PTMA210452FL	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC		1	25 dBm	10		MODULE	28	MODULE,8LEAD,.6	50 ohm	RF/Microwave Amplifiers		26.5 dB		Gold (Au)		e4	1900 MHz	2200 MHz
PTMA210452ELV1	Infineon Technologies	NARROW BAND HIGH POWER			CERAMIC		1					28	FLNG,.59"H.SPACE		RF/Microwave Amplifiers
PTMA180402FLV1	Infineon Technologies	NARROW BAND HIGH POWER		8	CERAMIC		1					28	MODULE,8LEAD,.6		RF/Microwave Amplifiers
PTMA210452EL	Infineon Technologies	NARROW BAND HIGH POWER			CERAMIC		1	25 dBm	10		MODULE	28	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers		26.5 dB		Gold (Au)		e4	1900 MHz	2200 MHz
CGY41H	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGY41P	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS	1	16 dBm	2	80 mA	COMPONENT	3.3/5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		8.5 dB					100 MHz	3000 MHz
CGM1900C	Infineon Technologies	NARROW BAND MEDIUM POWER		7	CERAMIC	GAAS			5		COMPONENT	3.7	MODULE,7LEAD,.23	50 ohm	RF/Microwave Amplifiers	110 Cel	20 dB	-30 Cel				1850 MHz	1910 MHz
CGM800C	Infineon Technologies	NARROW BAND MEDIUM POWER		7	CERAMIC	GAAS			5		COMPONENT	3.7	MODULE,7LEAD,.23	50 ohm	RF/Microwave Amplifiers	110 Cel	20 dB	-30 Cel				824 MHz	849 MHz
CGY40	Infineon Technologies	WIDE BAND LOW POWER	SURFACE MOUNT	4	CERAMIC	GAAS			2	80 mA	COMPONENT	4.5	SL,4LEAD,.07SQ		RF/Microwave Amplifiers	80 Cel		-40 Cel				100 MHz	1800 MHz
MAX3505EGP	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	20	CERAMIC		1			335 mA	COMPONENT	5	LCC20,.20SQ,25	75 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	5 MHz	65 MHz
MAX2373EGC	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	850 MHz	940 MHz
MAX2371EGC	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	136 MHz	174 MHz
MAX2373EGC-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	850 MHz	940 MHz
MAX2373EGC+	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	MATTE TIN		e3	850 MHz	940 MHz
MAX2373EGC+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	MATTE TIN		e3	850 MHz	940 MHz
S-AU81	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	CERAMIC		1					3.6	DILCC6,.25,67		RF/Microwave Amplifiers	60 Cel		-20 Cel
TMD1415-2B	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1					7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD0507-2A	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1	20 dBm	3		MODULE	10,-5	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				5100 MHz	7200 MHz
TMD0507-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS				2000 mA		10	FLNG,.59"H.SPACE		RF/Microwave Amplifiers
TMD7185-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC		1	10 dBm	3	1700 mA	COMPONENT	10,-5	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				7100 MHz	8500 MHz
TMD0305-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS		25 dBm	3	1900 mA	MODULE	10	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers		20 dB		Tin/Lead (Sn/Pb)		e0	3400 MHz	5100 MHz
TMD1013-1	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS	1	15 dBm	3		MODULE	10,-5	FLNG,.53"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				10000 MHz	13300 MHz
TMD3438-1	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS						7.5,-5	QFL24,.37SQ		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
S-AU76	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	CERAMIC	HYBRID		12.3 dBm	20		MODULE	6	LCC5(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)		e0	824 MHz	849 MHz
TMD2121-3A	Toshiba	NARROW BAND HIGH POWER			CERAMIC	GAAS				1200 mA		10	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-2C	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC		1	20 dBm		1800 mA	MODULE	7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers							13750 MHz	14500 MHz
S-AU87	Toshiba		SURFACE MOUNT	6	CERAMIC		1			1000 mA		6	SOLCC6,.12,47		RF/Microwave Amplifiers	85 Cel		-20 Cel
S-AU84	Toshiba		SURFACE MOUNT	6	CERAMIC		1			440 mA		3.5	DILCC6,.25,67		RF/Microwave Amplifiers	85 Cel		-20 Cel
TDM0305-2	Toshiba				CERAMIC	GAAS	1			1900 mA		10,-5	FLNG,.59"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel
TMD0708-2	Toshiba	WIDE BAND MEDIUM POWER			CERAMIC	GAAS		25 dBm	3	2000 mA	MODULE	10	FLNG,.59"H.SPACE	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				7100 MHz	8500 MHz
TMD1414-1B	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC	GAAS	1			1000 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1414-1C	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC	GAAS	1			1000 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
TMD1925-3	Toshiba	NARROW BAND HIGH POWER			CERAMIC		1	13 dBm		1900 mA	COMPONENT	10	FLNG,.53"H.SPACE	50 ohm	RF/Microwave Amplifiers							1900 MHz	2500 MHz
TMD1414-1G	Toshiba	NARROW BAND MEDIUM POWER			CERAMIC		1					7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
UPG100A	Renesas Electronics		SURFACE MOUNT	8	CERAMIC	GAAS				60 mA		+-5	QFL8,.15SQ		RF/Microwave Amplifiers	125 Cel		-65 Cel	Tin/Lead (Sn/Pb)		e0
UPG102B-1	Renesas Electronics				CERAMIC	GAAS				100 mA		4	FLANGE MT,.56X.19		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPG101B	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	CERAMIC	GAAS		15 dBm		143 mA	COMPONENT	8,-5	QFL8,.15SQ	50 ohm	RF/Microwave Amplifiers	80 Cel	12 dB	-50 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	50 MHz	3000 MHz
UPG102K-2	Renesas Electronics				CERAMIC	GAAS				100 mA		4	FLANGE,.56X.19,LL		RF/Microwave Amplifiers	125 Cel		-65 Cel
UPG105B	Renesas Electronics				CERAMIC	GAAS				86 mA		+-5	FLANGE MT,.56X.19		RF/Microwave Amplifiers
UPG110B	Renesas Electronics		SURFACE MOUNT	4	CERAMIC	GAAS				180 mA		8	SL,4LEAD,.18SQ		RF/Microwave Amplifiers
PF0414A	Renesas Electronics	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	CERAMIC	HYBRID		13 dBm	3		COMPONENT	4.8	SOLCC8,.3		RF/Microwave Amplifiers	100 Cel		-30 Cel				1710 MHz	1785 MHz
UPG106B	Renesas Electronics		SURFACE MOUNT	8	CERAMIC	GAAS				300 mA		+-5	FL8,.2FL		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.