Infineon Technologies - CGY41H

  1. Home
  2. Infineon Technologies - CGY41H
CGY41H by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number CGY41H
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 16 dBm;
Datasheet CGY41H Datasheet
In Stock611
NAME DESCRIPTION
Package Body Material: CERAMIC
Construction: COMPONENT
Minimum Operating Frequency: 100 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 80 mA
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 2
No. of Terminals: 4
Maximum Input Power (CW): 16 dBm
Package Equivalence Code: SL,4LEAD,.07SQ
Technology: GAAS
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 3000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 8.5 dB
Power Supplies (V): 3.3/5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
611 - -

Popular Products

Category Top Products

BGU6005/N2X by NXP Semiconductors

BGU6005/N2X

NXP Semiconductors

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.
HMC383LC4TR by Analog Devices

HMC383LC4TR

Analog Devices

Analog Devices' HMC383LC4TR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 135mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.
HMC5805ALS6 by Analog Devices

HMC5805ALS6

Analog Devices

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.
SST13LP05-MLCF by Silicon Storage Technology

SST13LP05-MLCF

Silicon Storage Technology

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; No. of Functions: 2;
HMC871LC5 by Analog Devices

HMC871LC5

Analog Devices

Analog Devices' HMC871LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20000 MHz, handling up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.
MGA-635P8-TR1G by Broadcom

MGA-635P8-TR1G

Broadcom

Broadcom's MGA-635P8-TR1G is a GAAS RF amplifier with 16.5 dB gain, operating from 2300 to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V supply, making it ideal for wideband medium-power applications in RF and microwave systems. With a compact surface-mount package and high temperature range (-40 to 85°C), it offers reliable performance in various environments.
SGA-6489Z by Sirenza Microdevices

SGA-6489Z

Sirenza Microdevices

SGA-6489Z by Sirenza Microdevices is a wide band low power RF amplifier with 18.4 dB gain, operating from 0 to 3500 MHz. It has a max input power of 18 dBm and VSWR of 1.8, suitable for surface mount applications in RF & microwave systems.
RDA1005L by Rf Micro Devices

RDA1005L

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; No. of Functions: 1;
BGA3018,115 by NXP Semiconductors

BGA3018,115

NXP Semiconductors

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.
HMC342LC4TR by Analog Devices

HMC342LC4TR

Analog Devices

HMC342LC4TR by Analog Devices is a wide band low power RF amplifier with 1 function and 24 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V. This ceramic package surface mount device is suitable for RF and microwave applications.
HMC1082LP4ETR by Hittite Microwave

HMC1082LP4ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
MMG20241HT1 by Freescale Semiconductor

MMG20241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
MGA-81563-BLK by Hewlett Packard

MGA-81563-BLK

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 100 MHz;
TQP369184 by Triquint Semiconductor

TQP369184

Triquint Semiconductor

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 24 dBm; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Gain: 19 dB;
SBB5089Z by Qorvo

SBB5089Z

Qorvo

Qorvo's SBB5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF and microwave systems.
MAAM28000-A1G by Tyco Electronics M/a-com

MAAM28000-A1G

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Minimum Operating Frequency: 2000 MHz; Maximum Voltage Standing Wave Ratio: 1.5; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Input Power (CW): 20 dBm;
TSS-53LNB3+ by Mini-circuits

TSS-53LNB3+

Mini-circuits

WIDE BAND LOW POWER;
RF5110GSR by Rf Micro Devices

RF5110GSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;
HMC636ST89 by Analog Devices

HMC636ST89

Analog Devices

HMC636ST89 by Analog Devices is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications, this component is designed for surface mounting in RF and microwave systems.