Toshiba - TDM0305-2

Analog Devices' HMC635LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 18-40 GHz. It features a max input power of 15 dBm and operates on a 5V supply. Ideal for applications requiring high frequency amplification in RF & microwave systems.

GVA-63+ by Mini-circuits is a wide band low power RF amplifier with 19 dB gain, operating from 10 MHz to 6 GHz. It has a max input power of 13 dBm and operates on a 5V supply with a max current draw of 78 mA. Ideal for applications requiring amplification in the RF and microwave range.

Analog Devices' HMC462LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 84mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;

ADL9005ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 1.49 VSWR. Operating from 10 MHz to 26.5 GHz, it has a max input power of 22 dBm and operates on a 5V supply. Ideal for RF and microwave applications requiring high performance in a compact surface mount package.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Package Equivalence Code: SOLCC6,.1,25;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 4000 MHz; Gain: 23 dB; Maximum Operating Frequency: 11000 MHz; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;

Broadcom's MSA-1105-STR is a RF & Microwave Amplifier with 10 dB gain, 50 ohm impedance, and 1.7 max VSWR. Ideal for wideband low power applications from 50 MHz to 1300 MHz, it operates at 5.5V with a max input power of 13 dBm.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

WIDE BAND LOW POWER;

NPA1006A by M/a-com Technology Solutions is a wide band high power RF amplifier with 12.5 dB gain, operating from 20 MHz to 1000 MHz. It features a max VSWR of 15 and operates on a 28V power supply, suitable for surface mount applications in RF & microwave systems.

QPL9547TR7 by Qorvo is a wide band low power RF amplifier with 17.5 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 22 dBm and VSWR of 1.54, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 13500 MHz;

WIDE BAND LOW POWER;

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

WIDE BAND LOW POWER; Minimum Operating Frequency: 10 MHz; Additional Features: I/P POWER-MAX (PEAK)=27DBM; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -55 Cel; Characteristic Impedance: 50 ohm;