Renesas Electronics - UPG102K-2

  1. Home
  2. Renesas Electronics - UPG102K-2
UPG102K-2 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPG102K-2
Description RF/Microwave Amplifiers; Package Body Material: CERAMIC; Technology: GAAS; Maximum Supply Current: 100 mA; Minimum Operating Temperature: -65 Cel; Power Supplies (V): 4;
Datasheet UPG102K-2 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC
Package Equivalence Code: FLANGE,.56X.19,LL
Technology: GAAS
Maximum Operating Temperature: 125 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 100 mA
Minimum Operating Temperature: -65 Cel
Power Supplies (V): 4
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TQP3M9009 by Qorvo

TQP3M9009

Qorvo

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.
ADL8107ACPZN by Analog Devices

ADL8107ACPZN

Analog Devices

ADL8107ACPZN by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating frequency range of 6-18 GHz, and max input power of 22 dBm. Ideal for wideband low-power applications in RF and microwave systems due to its high performance and compact surface-mount construction.
ERA-3SM by Mini-circuits

ERA-3SM

Mini-circuits

The Mini-circuits ERA-3SM is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 3000 MHz. It has a max input power of 13 dBm and VSWR of 1.5, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is designed for surface mount installation and operates within a temperature range of -45 to 85°C.
BGU8007,115 by NXP Semiconductors

BGU8007,115

NXP Semiconductors

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.
GALI-39+ by Mini-circuits

GALI-39+

Mini-circuits

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.
SPF-5189Z by Qorvo

SPF-5189Z

Qorvo

Qorvo's SPF-5189Z is a GAAS RF amplifier with 11.3 dB gain, operating from 50 MHz to 4 GHz. It has a max input power of 27 dBm and operates on a 5V supply. Ideal for wideband medium-power applications, it features surface mounting and a plastic/epoxy package body.
BGA2003T/R by NXP Semiconductors

BGA2003T/R

NXP Semiconductors

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.
RA07H4047M-101 by Mitsubishi Electric

RA07H4047M-101

Mitsubishi Electric

Mitsubishi Electric's RA07H4047M-101 is a plastic/epoxy RF amplifier module with 14.77 dBm CW input power, 4 VSWR, and operating frequency range of 400-470 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 90°C with hybrid technology and requires 3.5-12.5V power supplies.
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
AG303-86G by Triquint Semiconductor

AG303-86G

Triquint Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;
ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.
A64 by Tyco Electronics M/a-com

A64

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 1200 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 6 dBm; Minimum Operating Frequency: 10 MHz;
AG302-86G by Triquint Semiconductor

AG302-86G

Triquint Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
CMPA2735075F1 by Wolfspeed

CMPA2735075F1

Wolfspeed

NARROW BAND HIGH POWER;
CMD264P3 by Qorvo

CMD264P3

Qorvo

Qorvo's CMD264P3 is a wide band low power RF amplifier with 18 dB gain, operating from 6-18 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high performance in a compact component.
CMPA5585030F by Wolfspeed

CMPA5585030F

Wolfspeed

WIDE BAND LOW POWER;
MGA-72543-BLK by Broadcom

MGA-72543-BLK

Broadcom

Broadcom's MGA-72543-BLK is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems.
HMC409LP4ETR by Hittite Microwave

HMC409LP4ETR

Hittite Microwave

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 3300 MHz; Gain: 28 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm;
MGA-72543-TR2G by Agilent Technologies

MGA-72543-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 2.1; Gain: 9.2 dB; Maximum Operating Frequency: 6000 MHz;
RF6886TR13 by Rf Micro Devices

RF6886TR13

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3.6;