Toshiba - TMD0507-2

  1. Home
  2. Toshiba - TMD0507-2
TMD0507-2 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TMD0507-2
Description WIDE BAND MEDIUM POWER; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 10; Package Equivalence Code: FLNG,.59"H.SPACE; Maximum Supply Current: 2000 mA;
Datasheet TMD0507-2 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC
Package Equivalence Code: FLNG,.59"H.SPACE
Technology: GAAS
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 2000 mA
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Power Supplies (V): 10
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC465LP5ETR by Hittite Microwave

HMC465LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
HMC478ST89ETR by Hittite Microwave

HMC478ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;
MGA-635P8-BLKG by Broadcom

MGA-635P8-BLKG

Broadcom

Broadcom's MGA-635P8-BLKG is a GAAS RF amplifier with 16.5 dB gain, operating from 2300 to 4000 MHz. It has a max input power of 20 dBm and requires a 5V power supply. Ideal for wideband medium-power applications, it features surface mounting and operates in temperatures ranging from -40 to 85°C.
ATF-50189 by Broadcom

ATF-50189

Broadcom

NARROW BAND MEDIUM POWER; Minimum Operating Frequency: 0 MHz; Maximum Operating Frequency: 2400 MHz; Construction: COAXIAL;
TQP3M9035 by Triquint Semiconductor

TQP3M9035

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 50 MHz;
MAX2643EXT+T by Maxim Integrated

MAX2643EXT+T

Maxim Integrated

WIDE BAND LOW POWER; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; JESD-609 Code: e4; Characteristic Impedance: 50 ohm; Gain: 14.5 dB;
RF5110G by Qorvo

RF5110G

Qorvo

Qorvo's RF5110G is a GAAS technology narrow band high power amplifier with 32 dB gain. It operates b/w 880-915 MHz, handles up to 13 dBm CW input power, and has a VSWR of 10. Suitable for RF applications requiring high power amplification in the frequency range.
BGB741L7ESD-E6327 by Infineon Technologies

BGB741L7ESD-E6327

Infineon Technologies

BGB741L7ESD-E6327 by Infineon Technologies is a RF & Microwave Amplifier with 3V power supply, 7 terminals, and gold finish. It operates on bipolar technology with a max current of 7.2mA. Ideal for surface mount applications in various electronic devices.
MGA-62563-TR1 by Broadcom

MGA-62563-TR1

Broadcom

Broadcom's MGA-62563-TR1 is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and requires 3/5V power supplies, drawing a max current of 77mA.
A33 by M/a-com Technology Solutions

A33

M/a-com Technology Solutions

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;
MGA-31189-TR1G by Broadcom

MGA-31189-TR1G

Broadcom

Broadcom's MGA-31189-TR1G is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply, making it suitable for wideband medium-power applications in RF and microwave systems.
HMC608LC4TR by Hittite Microwave

HMC608LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;
HMC327MS8GTR by Analog Devices

HMC327MS8GTR

Analog Devices

Analog Devices' HMC327MS8GTR is a wide band medium power RF amplifier with 5V power supply, operating from -40 to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for RF and microwave applications requiring high performance in compact designs.
MAX2640AUT+T by Maxim Integrated

MAX2640AUT+T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
ADPA7006AEHZ by Analog Devices

ADPA7006AEHZ

Analog Devices

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.
HMC506LP4E by Analog Devices

HMC506LP4E

Analog Devices

Analog Devices' HMC506LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 7800-8700 MHz, and VSWR of 2. It is ideal for narrow band low power applications in temperatures ranging from -40 to 85°C.
HMC816LP4ETR by Hittite Microwave

HMC816LP4ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
MW7IC2040NR1 by Freescale Semiconductor

MW7IC2040NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);
HMC478SC70ETR by Analog Devices

HMC478SC70ETR

Analog Devices

Analog Devices' HMC478SC70ETR is a wide band low power RF amplifier with 5V supply, 82mA max current, and -40 to 85°C operating range. Its bipolar technology and surface mount package make it ideal for RF & microwave applications requiring high performance in compact designs.
HMC506LP4TR by Hittite Microwave

HMC506LP4TR

Hittite Microwave

NARROW BAND LOW POWER;