BICMOS RF & Microwave Amplifiers 36

Reset All

Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX2659ELT+T	Analog Devices		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1			5.6 mA		1.8/3	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	GOLD NICKEL		e4
MBC13916NT1	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	BICMOS		1	10 dBm		5.6 mA	COMPONENT	2.7	SOT-343R	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	MATTE TIN		e3	100 MHz	2500 MHz
MAX2691EWS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS		1				COMPONENT	1.8/3.3	BGA4,2X2,16	50 ohm	RF/Microwave Amplifiers	85 Cel	13.1 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
SKY65624-682LF	Skyworks Solutions	NARROW BAND LOW POWER	SURFACE MOUNT	4		BICMOS		1	0 dBm	1.5	5 mA	COMPONENT	1.8/2.8		50 ohm		85 Cel	16 dB	-40 Cel				1559 MHz	1606 MHz
MAX2659ELT/V+T	Analog Devices		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	AEC-Q100	1			5.6 mA		1.8/3.3	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2659ELT/V+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	AEC-Q100	1	10 dBm		5.6 mA	COMPONENT	1.8/3	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel
XTRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1				COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		105 Cel	16 dB	-40 Cel				10 MHz	11000 MHz
BGU8011X	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1					1.8/2.85	SOLCC6,.04,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
SKY65605-21	Skyworks Solutions	NARROW BAND LOW POWER	SURFACE MOUNT	6		BICMOS		1	10 dBm	1.92	4.5 mA	COMPONENT	1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	17 dB	-40 Cel				1559 MHz	1606 MHz
TRF8010PWP	Texas Instruments	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS			10 dBm	6			3/5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-40 Cel				870 MHz	925 MHz
TRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	11000 MHz
TRF1208RPVT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm		105 Cel	16 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	10 MHz	11000 MHz
5962R2122001VXC	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12		BICMOS	MIL-PRF-38535; MIL-STD-883	1				COMPONENT	3.3		50 ohm		125 Cel	12.5 dB	-40 Cel		RH - 100K Rad(Si)		10 MHz	6500 MHz
HMC685LP4TR	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BICMOS					140 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel		-40 Cel
HMC684LP4TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BICMOS					100 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel		-40 Cel
HMC685LP4ETR	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BICMOS					140 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel		-40 Cel	MATTE TIN		e3	1700 MHz	2200 MHz
HMC684LP4ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BICMOS					100 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel		-40 Cel	MATTE TIN		e3
MAX2634AXT+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	5 dBm		6 mA	COMPONENT	2.5/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	125 Cel	10 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	315 MHz	433 MHz
MAX2657EWT+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	5 dBm			COMPONENT	1.8/3	BGA6,2X3,16	50 ohm	RF/Microwave Amplifiers	85 Cel	19.5 dB	-40 Cel	TIN SILVER COPPER NICKEL	CMOS COMPATIBLE	e2
MAX2692EWS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS		1	5 dBm			COMPONENT	1.8/3.3	BGA4,2X2,16	50 ohm	RF/Microwave Amplifiers	85 Cel	13.2 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2659ELT+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.6 mA	COMPONENT	1.8/3	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	GOLD NICKEL	LOW NOISE	e4
MAX2658EWT+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	5 dBm			COMPONENT	1.8/3	BGA6,2X3,16	50 ohm	RF/Microwave Amplifiers	85 Cel	17.7 dB	-40 Cel	TIN SILVER COPPER NICKEL	CMOS COMPATIBLE	e2
SMA661ASTR	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1				COMPONENT	2.7	FL6,.047,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	LOW NOISE	e4
SMA661AS	STMicroelectronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1				COMPONENT	2.7	FL6,.047,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel				1500 MHz	1650 MHz
MC13852EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		6.5 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.4 dB	-30 Cel				400 MHz	1000 MHz
MBC13720NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	10 dBm			COMPONENT	2.7	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	12 dB	-30 Cel	TIN		e3	400 MHz	2400 MHz
MC13851EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
MBC13917EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.6 mA	COMPONENT	2.7	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel				100 MHz	2500 MHz
MBC13916T1	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	BICMOS		1	10 dBm		5.6 mA	COMPONENT	2.7	SOT-343R	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
MC13850EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		12.5 mA	COMPONENT	2.7	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				400 MHz	2500 MHz
MC13851EPR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
BGU8011X,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1					1.8/2.85	SOLCC6,.04,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2695EWS+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS		1	5 dBm			COMPONENT	1.8/3.3	BGA4,2X2,16	50 ohm	RF/Microwave Amplifiers	85 Cel	10.9 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2689EWS+T10	Maxim Integrated		SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS		1					1.8/3.3	BGA4,2X2,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2687EWS+T10	Maxim Integrated		SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS		1					1.8/3.3	BGA4,2X2,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
UPD5750T7D-E4A-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1			4.5 mA		1.8	BGA6,2X3,10		RF/Microwave Amplifiers	85 Cel		-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.