STMicroelectronics - SMA661AS

  1. Home
  2. STMicroelectronics - SMA661AS
SMA661AS by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number SMA661AS
Description NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Package Equivalence Code: FL6,.047,20;
Datasheet SMA661AS Datasheet
In Stock1,556
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1500 MHz
Sub-Category: RF/Microwave Amplifiers
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
No. of Terminals: 6
Package Equivalence Code: FL6,.047,20
Technology: BICMOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1650 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Gain: 18 dB
Power Supplies (V): 2.7
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,556 - -

Popular Products

Category Top Products

NBB-400 by Qorvo

NBB-400

Qorvo

Qorvo's NBB-400 is a ceramic-packaged RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates b/w -45°C to +85°C temperatures and requires a 3.9V supply voltage.
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
RF5110GSR by Rf Micro Devices

RF5110GSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;
ZHL-1-2W by Mini-circuits

ZHL-1-2W

Mini-circuits

ZHL-1-2W by Mini-circuits is a COAXIAL RF amplifier with 29 dB Gain, 10 dBm CW input power, and VSWR of 2. Ideal for wideband high-power applications from 5 MHz to 500 MHz. Operating temperature range: -20°C to +65°C.
SBB5089ZSR by Rf Micro Devices

SBB5089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC659LC5 by Analog Devices

HMC659LC5

Analog Devices

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.
MSA-1105-STR by Agilent Technologies

MSA-1105-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 50 MHz;
MGA-62563-TR1 by Broadcom

MGA-62563-TR1

Broadcom

Broadcom's MGA-62563-TR1 is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and requires 3/5V power supplies, drawing a max current of 77mA.
HMC998APM5E by Analog Devices

HMC998APM5E

Analog Devices

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
ALM-32220-BLKG by Broadcom

ALM-32220-BLKG

Broadcom

ALM-32220-BLKG by Broadcom is a GAAS module with 13.5 dB gain, operating from 1700 to 2700 MHz. With a max input power of 28 dBm, it's ideal for wideband high-power RF applications requiring a 50 ohm impedance and 5V supply voltage.
HMC549MS8GTR by Hittite Microwave

HMC549MS8GTR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
TGA2701-SM by Triquint Semiconductor

TGA2701-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;
SKY65160-11 by Skyworks Solutions

SKY65160-11

Skyworks Solutions

RF/Microwave Amplifiers;
XL1000-BD-000V by M/a-com Technology Solutions

XL1000-BD-000V

M/a-com Technology Solutions

XL1000-BD-000V by M/a-com Technology Solutions is a GAAS RF amplifier with 12dB gain, operating b/w 20-40 GHz. It has a max input power of 12 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its compact construction and temperature range of -55 to 85°C.
CMPA901A035F1 by Wolfspeed

CMPA901A035F1

Wolfspeed

WIDE BAND HIGH POWER;
HMC499LC4 by Hittite Microwave

HMC499LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 9 dB;
HMC342LC4TR by Hittite Microwave

HMC342LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;
HMC441LP3 by Analog Devices

HMC441LP3

Analog Devices

HMC441LP3 by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. Operating from 6.5 GHz to 13.5 GHz, it has a max input power of 15 dBm and requires a 5V supply at 115 mA. Ideal for applications requiring high frequency amplification in RF and microwave systems.