Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
28 dBm |
50 mA |
COMPONENT |
4 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
22.3 dB |
Matte Tin (Sn) |
e3 |
800 MHz |
3000 MHz |
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|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
20 dBm |
2 |
COMPONENT |
50 ohm |
20 dB |
0 MHz |
3500 MHz |
||||||||||||||||||
Broadcom |
WIDE BAND LOW POWER |
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|
Broadcom |
NARROW BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
910 mA |
COMPONENT |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11.2 dB |
3300 MHz |
3900 MHz |
||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
25 dBm |
COMPONENT |
50 ohm |
8.2 dB |
1600 MHz |
2700 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
HYBRID |
1 |
15 dBm |
70 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
6000 MHz |
20000 MHz |
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|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
2300 MHz |
2700 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC10,.08SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
10.5 dB |
Matte Tin (Sn) |
e3 |
50 MHz |
7000 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
GAAS |
1 |
13 dBm |
30 mA |
COMPONENT |
5 |
WAFER |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
Tin (Sn) |
LOW NOISE |
e3 |
900 MHz |
11000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
GAAS |
1 |
20 dBm |
88 mA |
COMPONENT |
5 |
WAFER |
50 ohm |
RF/Microwave Amplifiers |
12.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1000 MHz |
12000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
15 dBm |
2 |
COMPONENT |
50 ohm |
17.5 dB |
0 MHz |
2500 MHz |
||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.2 |
28 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3500 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 dBm |
1.2 |
90 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
Matte Tin (Sn) |
HIGH RELIABILITY |
e3 |
0 MHz |
3400 MHz |
||||||
Broadcom |
WIDE BAND LOW POWER |
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|
Broadcom |
WIDE BAND LOW POWER |
17 dBm |
COMPONENT |
50 ohm |
14 dB |
.03 MHz |
40000 MHz |
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|
Broadcom |
NARROW BAND MEDIUM POWER |
1 |
10 dBm |
160 mA |
COAXIAL |
4 |
DIE OR CHIP |
RF/Microwave Amplifiers |
20 dB |
7000 MHz |
21000 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
1 |
15 dBm |
80 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
18.5 dB |
26000 MHz |
43000 MHz |
||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
15 dBm |
250 mA |
COMPONENT |
4.5 |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Frequency Multipliers |
14 dB |
Nickel/Gold (Ni/Au) |
e4 |
30000 MHz |
||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
138 mA |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
90 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
|||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
67 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
450 MHz |
2000 MHz |
||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
61 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.1 dB |
-40 Cel |
Tin (Sn) |
e3 |
1500 MHz |
2300 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
50 mA |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
14.4 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
1.2 |
101 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.7 |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.7 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.9 |
40 mA |
COMPONENT |
7.8 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
20.5 dB |
Matte Tin (Sn) |
e3 |
0 MHz |
1000 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
4 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
|||||||||
Broadcom |
WIDE BAND LOW POWER |
13 dBm |
2 |
COMPONENT |
50 ohm |
10 dB |
2000 MHz |
6000 MHz |
|||||||||||||||||||
|
Broadcom |
NARROW BAND LOW POWER |
COMPONENT |
50 MHz |
300 MHz |
||||||||||||||||||||||
Broadcom |
WIDE BAND LOW POWER |
20 dBm |
2 |
COMPONENT |
50 ohm |
6000 MHz |
18000 MHz |
||||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
12 mA |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
2500 MHz |
4000 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
13 dBm |
1.9 |
40 mA |
COMPONENT |
7.8 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
22 dB |
Gold (Au) |
e4 |
100 MHz |
4000 MHz |
||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
COMPONENT |
3 |
SOLCC6,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
1500 MHz |
3000 MHz |
|||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
25 dBm |
2 |
100 mA |
COMPONENT |
8.4 |
SL,4GW-LD,.145CIR |
50 ohm |
RF/Microwave Amplifiers |
6 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
100 MHz |
1500 MHz |
|||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
1 |
13 dBm |
1.9 |
70 mA |
COMPONENT |
5.25 |
SL,4LEAD,.1"SQ |
50 ohm |
RF/Microwave Amplifiers |
7.5 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
3800 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
13 dBm |
1.4 |
40 mA |
COMPONENT |
5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
0 MHz |
2500 MHz |
|||||||||
Broadcom |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
1 |
10 dBm |
160 mA |
COAXIAL |
4 |
DIE OR CHIP |
RF/Microwave Amplifiers |
20 dB |
7000 MHz |
21000 MHz |
|||||||||||||||
Broadcom |
WIDE BAND LOW POWER |
13 dBm |
1.2 |
COMPONENT |
50 ohm |
0 MHz |
900 MHz |
||||||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
|||||||||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
BIPOLAR |
13 dBm |
1.8 |
50 mA |
COMPONENT |
5 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
11.5 dB |
Gold (Au) |
HIGH RELIABILITY |
e4 |
0 MHz |
2800 MHz |
|||||||
Broadcom |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
15 dBm |
35 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
17 dB |
21200 MHz |
26500 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
8.5 dB |
Gold (Au) |
e4 |
2000 MHz |
35000 MHz |
|||||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
23 dBm |
1000 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
18000 MHz |
28000 MHz |
|||||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.7 |
20 mA |
COMPONENT |
3.5 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
0 MHz |
800 MHz |
|||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
1 |
23 dBm |
COMPONENT |
3.5,5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
HIGH RELIABILITY |
17700 MHz |
32000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.