Diodes Incorporated RF & Microwave Amplifiers 21

Reset All

Part	Manufacturer	RF or Microwave Device Type	Construction	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
AP2511MP-13	Diodes Incorporated	WIDE BAND MEDIUM POWER						MATTE TIN		e3
UZAMP002H6TC	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	21 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	2500 MHz
ZAMP003H6TA	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	14 dB	-40 Cel	Matte Tin (Sn)		e3	800 MHz	2500 MHz
AP2511FGE-7	Diodes Incorporated	WIDE BAND MEDIUM POWER						NICKEL PALLADIUM GOLD		e4
AP2511SN-7	Diodes Incorporated	WIDE BAND MEDIUM POWER						NICKEL PALLADIUM GOLD		e4
UZAMP002H6TA	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	21 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	2500 MHz
UZAMP003H6TA	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	14 dB	-40 Cel	MATTE TIN		e3	800 MHz	2500 MHz
ZAMP001H6TC	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	17 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	2500 MHz
ZAMP002H6TC	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	21 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	2500 MHz
AP2501MP-13	Diodes Incorporated	WIDE BAND MEDIUM POWER						MATTE TIN		e3
AP2511S-13	Diodes Incorporated	WIDE BAND MEDIUM POWER						MATTE TIN		e3
ZAMP001H6TA	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	17 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	2500 MHz
AP2501SN-7	Diodes Incorporated	WIDE BAND MEDIUM POWER						NICKEL PALLADIUM GOLD		e4
ZAMP002H6TA	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	21 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	2500 MHz
ZAMP003H6TC	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	14 dB	-40 Cel	Matte Tin (Sn)		e3	800 MHz	2500 MHz
UZAMP001H6TA	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	17 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	2500 MHz
AP2501S-13	Diodes Incorporated	WIDE BAND MEDIUM POWER						MATTE TIN		e3
AP2511M8-13	Diodes Incorporated	WIDE BAND MEDIUM POWER						MATTE TIN		e3
UZAMP001H6TC	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	17 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	2500 MHz
UZAMP003H6TC	Diodes Incorporated	WIDE BAND LOW POWER	COMPONENT	50 ohm	85 Cel	14 dB	-40 Cel	MATTE TIN		e3	800 MHz	2500 MHz
AP2501FGE-7	Diodes Incorporated	WIDE BAND MEDIUM POWER						NICKEL PALLADIUM GOLD		e4

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.