VARIABLE ATTENUATOR RF/Microwave Attenuators 352

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Nominal Attenuation Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum Insertion Loss Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC424LP3E

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

25.05 dBm

31.5 dB

5 mA

COMPONENT

-5

LCC16,.12SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

Matte Tin (Sn)

4.6 dB

e3

0 MHz

13000 MHz

HMC541LP3ETR

Analog Devices

VARIABLE ATTENUATOR

MATTE TIN

e3

HMC941

Analog Devices

VARIABLE ATTENUATOR

26.99 dBm

15.5 dB

COMPONENT

50 ohm

85 Cel

-55 Cel

Gold (Au)

4.8 dB

e4

100 MHz

30000 MHz

HMC941LP4E

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

26.99 dBm

15.5 dB

6.5 mA

COMPONENT

+-5

LCC24,.16SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Matte Tin (Sn)

6.5 dB

e3

100 MHz

33000 MHz

HMC346ALP3E

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

18 dBm

1.92

30 dB

COMPONENT

LCC16,.12SQ,20

50 ohm

85 Cel

-40 Cel

3.2 dB

0 MHz

14000 MHz

ADRF5473BCZ

Analog Devices

VARIABLE ATTENUATOR

ADRF5473BCZ-SX

Analog Devices

VARIABLE ATTENUATOR

ADRF5473BCZ-GP

Analog Devices

VARIABLE ATTENUATOR

HMC8802

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

9

38535V;38534K;883S

25 dBm

33.7 dB

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-40 Cel

4.6 dB

0 MHz

13000 MHz

MAX19790ETX+T

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

36

PLASTIC/EPOXY

BICMOS

20 dBm

22 dB

9.5 mA

COMPONENT

5

LCC36,.25SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

7 dB

e3

250 MHz

4000 MHz

MAX19794ETX+T

Analog Devices

VARIABLE ATTENUATOR

Matte Tin (Sn) - annealed

e3

MAX19794ETX+

Analog Devices

VARIABLE ATTENUATOR

Matte Tin (Sn) - annealed

e3

MAX19790ETX+TW

Analog Devices

VARIABLE ATTENUATOR

MMT20303HT1

NXP Semiconductors

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

CMOS

30 dBm

1.22

7 dB

3 mA

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

-40 Cel

1 dB

50 MHz

4000 MHz

MAX19790ETX/GH9

Maxim Integrated

VARIABLE ATTENUATOR

TG2202F

Toshiba

VARIABLE ATTENUATOR

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

20 dBm

2

22 dB

.1 mA

COMPONENT

3

TSOP6,.11,37

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

1.5 dB

e0

1895 MHz

1918 MHz

F1952NCGI8

Renesas Electronics

VARIABLE ATTENUATOR

IDTF2255NLGK8

Renesas Electronics

VARIABLE ATTENUATOR

Matte Tin (Sn)

e3

IDTF2258NLGK8

Renesas Electronics

VARIABLE ATTENUATOR

F2270NLGK

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

28 dBm

1.15

35 dB

2.5 mA

COMPONENT

5

LCC16,.12SQ,20

75 ohm

105 Cel

-40 Cel

Tin (Sn)

1.8 dB

e3

5 MHz

3000 MHz

F2250NLGK8

Renesas Electronics

VARIABLE ATTENUATOR

Matte Tin (Sn)

e3

F1950NBGI8

Renesas Electronics

VARIABLE ATTENUATOR

Matte Tin (Sn) - annealed

e3

F2251NLGI8

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

30 dBm

1.33

35 dB

2 mA

COMPONENT

3.3/5

LCC16,.12SQ,20

50 ohm

105 Cel

-40 Cel

Tin (Sn)

3.1 dB

e3

50 MHz

6000 MHz

F1977NBGI8

Renesas Electronics

VARIABLE ATTENUATOR

Tin (Sn)

e3

F1953NCGI8

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

20

23 dBm

1.15

32.4 dB

.25 mA

COMPONENT

3

LCC20,.16SQ,20

50 ohm

100 Cel

-40 Cel

MATTE TIN

e3

400 MHz

4000 MHz

F2250NLGK

Renesas Electronics

VARIABLE ATTENUATOR

30 dBm

35 dB

COMPONENT

50 ohm

105 Cel

-40 Cel

MATTE TIN

1.9 dB

e3

50 MHz

6000 MHz

F1953NCGI

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

20

23 dBm

32.4 dB

.25 mA

COMPONENT

3

LCC20,.16SQ,20

50 ohm

100 Cel

-40 Cel

MATTE TIN

1.4 dB

e3

400 MHz

4000 MHz

F1978NCGK8

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

20

PLASTIC/EPOXY

34 dBm

1.29

31.7 dB

.9 mA

COMPONENT

3.3

LCC20,.16SQ,20

75 ohm

105 Cel

-40 Cel

Tin (Sn)

2 dB

e3

5 MHz

3000 MHz

IDTF2250NLGK8

Renesas Electronics

VARIABLE ATTENUATOR

Matte Tin (Sn)

e3

F2270NLGK8

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

28 dBm

1.15

35 dB

2.5 mA

COMPONENT

5

LCC16,.12SQ,20

75 ohm

105 Cel

-40 Cel

Tin (Sn)

1.8 dB

e3

5 MHz

3000 MHz

F1950NCGI8

Renesas Electronics

VARIABLE ATTENUATOR

F2251NLGI

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

30 dBm

1.33

35 dB

2 mA

COMPONENT

3.3/5

LCC16,.12SQ,20

50 ohm

105 Cel

-40 Cel

Tin (Sn)

3.1 dB

e3

50 MHz

6000 MHz

F1978NCGK

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

20

PLASTIC/EPOXY

34 dBm

1.29

31.7 dB

.9 mA

COMPONENT

3.3

LCC20,.16SQ,20

75 ohm

105 Cel

-40 Cel

Tin (Sn)

2 dB

e3

5 MHz

3000 MHz

F1975NCGI

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

20

PLASTIC/EPOXY

34 dBm

1.29

31.7 dB

.9 mA

COMPONENT

3.3

LCC20,.16SQ,20

75 ohm

105 Cel

-40 Cel

Tin (Sn)

2 dB

e3

5 MHz

3000 MHz

F1975NCGI8

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

20

PLASTIC/EPOXY

34 dBm

1.29

31.7 dB

.9 mA

COMPONENT

3.3

LCC20,.16SQ,20

75 ohm

105 Cel

-40 Cel

Tin (Sn)

2 dB

e3

5 MHz

3000 MHz

F2255NLGK8

Renesas Electronics

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

1.5 mA

COMPONENT

3.3/5

LCC16,.12SQ,20

RF/Microwave Attenuators

Matte Tin (Sn)

e3

1 MHz

3000 MHz

F1951NBGI8

Renesas Electronics

VARIABLE ATTENUATOR

Matte Tin (Sn)

e3

F1951NCGI8

Renesas Electronics

VARIABLE ATTENUATOR

F1956NBGI8

Renesas Electronics

VARIABLE ATTENUATOR

MATTE TIN

e3

AMMC-6650-W10

Broadcom

VARIABLE ATTENUATOR

16.99 dBm

5 dB

COMPONENT

1.25,1.5

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

0 MHz

40000 MHz

AMMC-6650

Broadcom

VARIABLE ATTENUATOR

AMMP-6640-TR1G

Broadcom

VARIABLE ATTENUATOR

30 dBm

28 dB

COMPONENT

50 ohm

0 MHz

40000 MHz

HMMC-1015

Broadcom

VARIABLE ATTENUATOR

GAAS

16.99 dBm

40 dB

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

125 Cel

-55 Cel

0-26.5 GHZ SPECIFIED FREQUENCY RANGE

0 MHz

50000 MHz

AMMC-6640

Broadcom

VARIABLE ATTENUATOR

GAAS

30 dBm

28 dB

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

0 MHz

50000 MHz

AMMP-6650-TR2G

Broadcom

VARIABLE ATTENUATOR

SURFACE MOUNT

8

PLASTIC/EPOXY

42.3 dBm

20 dB

MODULE

1.25,1.5

LCC8,.2SQ,28

50 ohm

RF/Microwave Attenuators

Nickel/Gold (Ni/Au)

e4

0 MHz

30000 MHz

AMMC-6650-W50

Broadcom

VARIABLE ATTENUATOR

16.99 dBm

5 dB

COMPONENT

1.25,1.5

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

0 MHz

40000 MHz

ALM-38140

Broadcom

VARIABLE ATTENUATOR

26.99 dBm

39 dB

COMPONENT

50 ohm

3.7 dB

50 MHz

4000 MHz

AMMC-6630-W50

Broadcom

VARIABLE ATTENUATOR

GAAS

16.99 dBm

20 dB

MODULE

1

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

5000 MHz

45000 MHz

RF/Microwave Attenuators

RF/Microwave attenuators are electronic devices designed to reduce the strength or amplitude of an RF or microwave signal without significantly affecting its waveform. They are used in a variety of applications, including signal conditioning, power level control, and impedance matching.

There are various types of RF/Microwave attenuators, including fixed, variable, and programmable. Fixed attenuators provide a fixed amount of attenuation and are used in applications where the signal level needs to be reduced by a specific amount. Variable attenuators allow for the adjustment of the signal level by rotating a knob or sliding a lever, and are used in applications where the signal level needs to be continuously adjusted. Programmable attenuators can be controlled electronically and offer greater flexibility in adjusting the signal level.

Attenuators can be designed using different technologies, such as resistive, capacitive, and diode-based. Resistive attenuators use resistors to dissipate energy and reduce signal strength. Capacitive attenuators use capacitors to block high-frequency signals and allow low-frequency signals to pass through. Diode-based attenuators use PIN diodes or varactor diodes to control signal strength.

RF/Microwave attenuators are used in a wide range of applications, including in wireless communication systems, test and measurement equipment, radar systems, and satellite communication systems. They play an important role in controlling signal levels and ensuring the integrity of signals in these systems.