Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
12 dBm |
113 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
50 MHz |
2400 MHz |
|||||
Infineon Technologies |
DOUBLE BALANCED |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
17 dBm |
COMPONENT |
3 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Mixers |
7 dB |
500 MHz |
2500 MHz |
||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
75 mA |
COMPONENT |
5 |
TSSOP14,.25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
2500 MHz |
|||||
|
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2.8 mA |
6 |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
e4 |
|||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
25 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Tungsten/Nickel/Gold (W/Ni/Au) |
9.5 dB |
5500 MHz |
14000 MHz |
|||||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
17 dBm |
2.16 |
COMPONENT |
DILCC6,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
9.8 dB |
e0 |
200 MHz |
3000 MHz |
||||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
17 dBm |
2.16 |
COMPONENT |
DILCC6,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
9.8 dB |
e4 |
200 MHz |
3000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
6000 MHz |
10000 MHz |
|||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
17 dBm |
2.67 |
COMPONENT |
SMDIP6,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
9 dB |
e0 |
20 MHz |
1000 MHz |
||||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
17 dBm |
2.67 |
COMPONENT |
SMDIP6,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
9 dB |
e3 |
20 MHz |
1000 MHz |
|||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
6000 MHz |
10000 MHz |
|||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
11 dB |
e4 |
4000 MHz |
8500 MHz |
|||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
17 dBm |
6.26 |
COMPONENT |
SMDIP6,.4 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
9.8 dB |
e3 |
200 MHz |
3000 MHz |
|||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
17 dBm |
6.26 |
COMPONENT |
SMDIP6,.4 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
9.8 dB |
e0 |
200 MHz |
3000 MHz |
||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
20 dBm |
150 mA |
COMPONENT |
3.3 |
LCC12,.08X.12,20 |
50 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
e3 |
3000 MHz |
20000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10.5 dB |
e3 |
5000 MHz |
12000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tungsten/Nickel/Gold (W/Ni/Au) |
|||||||||||||
Agilent Technologies |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
65 mA |
10 |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
23 dBm |
1.96 |
COMPONENT |
GWDIP6,.4 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
8 dB |
e0 |
2 MHz |
500 MHz |
||||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
23 dBm |
1.96 |
COMPONENT |
GWDIP6,.4 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
8 dB |
e3 |
2 MHz |
500 MHz |
|||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
23 dBm |
2.6 |
COMPONENT |
DILCC6,.25 |
RF/Microwave Mixers |
100 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
8 dB |
e4 |
2 MHz |
500 MHz |
|||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
CERAMIC |
23 dBm |
2.6 |
COMPONENT |
DILCC6,.25 |
RF/Microwave Mixers |
100 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
8 dB |
e0 |
2 MHz |
500 MHz |
||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
25 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
9.5 dB |
5500 MHz |
14000 MHz |
||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
6000 MHz |
10000 MHz |
|||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
4 |
METAL |
23 dBm |
1.53 |
COMPONENT |
SMSIP4H,.4 |
RF/Microwave Mixers |
100 Cel |
-55 Cel |
Tin (Sn) |
8 dB |
e3 |
.15 MHz |
400 MHz |
|||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
GAAS |
16 dBm |
COMPONENT |
LCC20,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
8000 MHz |
12000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
7 |
GAAS |
25 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
10 dB |
6000 MHz |
14000 MHz |
||||||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
17 dBm |
2.25 |
COMPONENT |
FL6,.2,100 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
8 dB |
IMAGE REJECTION |
e0 |
2 MHz |
500 MHz |
||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
17 dBm |
2.25 |
COMPONENT |
FL6,.2,100 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN OVER NICKEL |
8 dB |
IMAGE REJECTION |
e3 |
2 MHz |
500 MHz |
|||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
85 Cel |
-40 Cel |
10 dB |
1500 MHz |
4500 MHz |
|||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
25 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Tungsten/Nickel/Gold (W/Ni/Au) |
9.5 dB |
5500 MHz |
14000 MHz |
|||||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
23 dBm |
5.87 |
COMPONENT |
SMDIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
9.7 dB |
e3 |
2500 MHz |
6000 MHz |
|||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
17 dBm |
1.79 |
COMPONENT |
SMDIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
9.7 dB |
e0 |
2500 MHz |
6000 MHz |
||||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
17 dBm |
6.15 |
COMPONENT |
SMDIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
9.7 dB |
e0 |
2500 MHz |
6000 MHz |
||||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
17 dBm |
6.15 |
COMPONENT |
SMDIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
9.7 dB |
e3 |
2500 MHz |
6000 MHz |
|||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
23 dBm |
2.61 |
COMPONENT |
LCC6/8,.37X.5,170 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
8.9 dB |
HIGH ISOLATION |
e0 |
5 MHz |
1800 MHz |
|||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
23 dBm |
2.61 |
COMPONENT |
LCC6/8,.37X.5,170 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
8.9 dB |
HIGH ISOLATION |
e4 |
5 MHz |
1800 MHz |
||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
23 dBm |
1.67 |
COMPONENT |
LCC6/8,.37X.5,170 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
9.1 dB |
USABLE TO 3 GHZ |
e4 |
5 MHz |
3000 MHz |
||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
23 dBm |
1.67 |
COMPONENT |
LCC6/8,.37X.5,170 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
9.1 dB |
USABLE TO 3 GHZ |
e0 |
5 MHz |
3000 MHz |
|||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
MODULE |
3 |
SOP16,.25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-25 Cel |
TIN LEAD |
e0 |
|||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BIPOLAR |
MODULE |
+-5 |
LDCC20,.4SQ |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
e0 |
||||||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
17 dBm |
3.01 |
COMPONENT |
FL6,.2,100 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
8.2 dB |
e3 |
.5 MHz |
500 MHz |
|||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
17 dBm |
3.01 |
COMPONENT |
FL6,.2,100 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
8.2 dB |
e0 |
.5 MHz |
500 MHz |
||||||||
|
Broadcom |
IMAGE REJECTION |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
8 dB |
5000 MHz |
30000 MHz |
|||||||||||
Infineon Technologies |
DOUBLE BALANCED |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
17 dBm |
COMPONENT |
3 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Mixers |
Tin/Lead (Sn/Pb) |
7.5 dB |
e0 |
500 MHz |
2500 MHz |
||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
24000 MHz |
28000 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.