SURFACE MOUNT RF/Microwave Mixers 336

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum Conversion Loss Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

AD8342ACPZ-REEL7

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

16

PLASTIC/EPOXY

BIPOLAR

12 dBm

113 mA

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

e3

50 MHz

2400 MHz

CMY210

Infineon Technologies

DOUBLE BALANCED

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

17 dBm

COMPONENT

3

TSOP5/6,.11,37

50 ohm

RF/Microwave Mixers

7 dB

500 MHz

2500 MHz

AD8343ARUZ-REEL7

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

14

PLASTIC/EPOXY

BIPOLAR

2

75 mA

COMPONENT

5

TSSOP14,.25

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

e3

0 MHz

2500 MHz

SA602AD/01-T

NXP Semiconductors

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

2.8 mA

6

SOP8,.25

RF/Microwave Mixers

85 Cel

-40 Cel

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

e4

HMC558ALC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

9.5 dB

5500 MHz

14000 MHz

RMS-30

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

2.16

COMPONENT

DILCC6,.25

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

9.8 dB

e0

200 MHz

3000 MHz

RMS-30+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

2.16

COMPONENT

DILCC6,.25

RF/Microwave Mixers

85 Cel

-40 Cel

GOLD OVER NICKEL

9.8 dB

e4

200 MHz

3000 MHz

HMC207AS8ETR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

SOP8,.25

RF/Microwave Mixers

85 Cel

-40 Cel

HMC520ALC4

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

JMS-2LH

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

2.67

COMPONENT

SMDIP6,.3

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

9 dB

e0

20 MHz

1000 MHz

JMS-2LH+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

2.67

COMPONENT

SMDIP6,.3

RF/Microwave Mixers

85 Cel

-40 Cel

Tin (Sn) - with Nickel (Ni) barrier

9 dB

e3

20 MHz

1000 MHz

HMC520ALC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC525LC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

Gold (Au) - with Nickel (Ni) barrier

11 dB

e4

4000 MHz

8500 MHz

LRMS-30J+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

6.26

COMPONENT

SMDIP6,.4

RF/Microwave Mixers

85 Cel

-40 Cel

Tin (Sn) - with Nickel (Ni) barrier

9.8 dB

e3

200 MHz

3000 MHz

LRMS-30J

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

17 dBm

6.26

COMPONENT

SMDIP6,.4

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

9.8 dB

e0

200 MHz

3000 MHz

HMC521LC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-55 Cel

LTC5552IUDB#TRMPBF

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

PLASTIC/EPOXY

20 dBm

150 mA

COMPONENT

3.3

LCC12,.08X.12,20

50 ohm

105 Cel

-40 Cel

MATTE TIN

e3

3000 MHz

20000 MHz

HMC220AMS8ETR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

10.5 dB

e3

5000 MHz

12000 MHz

HMC557ALC4

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

IAM-82008

Agilent Technologies

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

65 mA

10

SOP8,.25

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

LRMS-1MH

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

23 dBm

1.96

COMPONENT

GWDIP6,.4

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

8 dB

e0

2 MHz

500 MHz

LRMS-1MH+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

23 dBm

1.96

COMPONENT

GWDIP6,.4

RF/Microwave Mixers

85 Cel

-40 Cel

Tin (Sn) - with Nickel (Ni) barrier

8 dB

e3

2 MHz

500 MHz

RMS-1MH+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

23 dBm

2.6

COMPONENT

DILCC6,.25

RF/Microwave Mixers

100 Cel

-55 Cel

Gold (Au) - with Nickel (Ni) barrier

8 dB

e4

2 MHz

500 MHz

RMS-1MH

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

CERAMIC

23 dBm

2.6

COMPONENT

DILCC6,.25

RF/Microwave Mixers

100 Cel

-55 Cel

Tin/Lead (Sn/Pb)

8 dB

e0

2 MHz

500 MHz

HMC558ALC3BTR-R5

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

9.5 dB

5500 MHz

14000 MHz

HMC520ALC4TR-R5

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

TUF-3HSM+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

4

METAL

23 dBm

1.53

COMPONENT

SMSIP4H,.4

RF/Microwave Mixers

100 Cel

-55 Cel

Tin (Sn)

8 dB

e3

.15 MHz

400 MHz

HMC1056LP4BETR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

20

PLASTIC/EPOXY

GAAS

16 dBm

COMPONENT

LCC20,.16SQ,20

50 ohm

85 Cel

-40 Cel

MATTE TIN

11 dB

e3

8000 MHz

12000 MHz

HMC553AG-SX

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

7

GAAS

25 dBm

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

ADE-1L

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

17 dBm

2.25

COMPONENT

FL6,.2,100

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

8 dB

IMAGE REJECTION

e0

2 MHz

500 MHz

ADE-1L+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

17 dBm

2.25

COMPONENT

FL6,.2,100

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

TIN OVER NICKEL

8 dB

IMAGE REJECTION

e3

2 MHz

500 MHz

HMC213BMS8GE

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSSOP8,.19

85 Cel

-40 Cel

10 dB

1500 MHz

4500 MHz

HMC558ALC3B

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

9.5 dB

5500 MHz

14000 MHz

SKY-60+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

23 dBm

5.87

COMPONENT

SMDIP8,.3

RF/Microwave Mixers

85 Cel

-40 Cel

Tin (Sn) - with Nickel (Ni) barrier

9.7 dB

e3

2500 MHz

6000 MHz

SKY-60

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

17 dBm

1.79

COMPONENT

SMDIP8,.3

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

9.7 dB

e0

2500 MHz

6000 MHz

SKY-60LH

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

17 dBm

6.15

COMPONENT

SMDIP8,.3

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

9.7 dB

e0

2500 MHz

6000 MHz

SKY-60LH+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

17 dBm

6.15

COMPONENT

SMDIP8,.3

RF/Microwave Mixers

85 Cel

-40 Cel

Tin (Sn) - with Nickel (Ni) barrier

9.7 dB

e3

2500 MHz

6000 MHz

SYM-18H

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

23 dBm

2.61

COMPONENT

LCC6/8,.37X.5,170

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

8.9 dB

HIGH ISOLATION

e0

5 MHz

1800 MHz

SYM-18H+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

23 dBm

2.61

COMPONENT

LCC6/8,.37X.5,170

RF/Microwave Mixers

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

8.9 dB

HIGH ISOLATION

e4

5 MHz

1800 MHz

SYM-30DHW+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

23 dBm

1.67

COMPONENT

LCC6/8,.37X.5,170

RF/Microwave Mixers

85 Cel

-40 Cel

GOLD OVER NICKEL

9.1 dB

USABLE TO 3 GHZ

e4

5 MHz

3000 MHz

SYM-30DHW

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

23 dBm

1.67

COMPONENT

LCC6/8,.37X.5,170

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

9.1 dB

USABLE TO 3 GHZ

e0

5 MHz

3000 MHz

AD608AR-REEL

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

16

PLASTIC/EPOXY

MODULE

3

SOP16,.25

50 ohm

RF/Microwave Mixers

85 Cel

-25 Cel

TIN LEAD

e0

AD831AP-REEL7

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

20

PLASTIC/EPOXY

BIPOLAR

MODULE

+-5

LDCC20,.4SQ

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

e0

ADE-1LH+

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

17 dBm

3.01

COMPONENT

FL6,.2,100

RF/Microwave Mixers

85 Cel

-40 Cel

Tin (Sn) - with Nickel (Ni) barrier

8.2 dB

e3

.5 MHz

500 MHz

ADE-1LH

Mini-circuits

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

17 dBm

3.01

COMPONENT

FL6,.2,100

RF/Microwave Mixers

85 Cel

-40 Cel

TIN LEAD

8.2 dB

e0

.5 MHz

500 MHz

AMMP-6530-TR1

Broadcom

IMAGE REJECTION

SURFACE MOUNT

8

PLASTIC/EPOXY

25 dBm

COMPONENT

LCC8,.2SQ,28

50 ohm

RF/Microwave Mixers

8 dB

5000 MHz

30000 MHz

CMY211

Infineon Technologies

DOUBLE BALANCED

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

17 dBm

COMPONENT

3

TSOP5/6,.11,37

50 ohm

RF/Microwave Mixers

Tin/Lead (Sn/Pb)

7.5 dB

e0

500 MHz

2500 MHz

HMC1063LP3ETR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

LCC16,.12SQ,20

50 ohm

85 Cel

-40 Cel

MATTE TIN

e3

24000 MHz

28000 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.