SURFACE MOUNT RF/Microwave Mixers 336

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Maximum Conversion Loss	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC553ALC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	25 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		10 dB			6000 MHz	14000 MHz
HMC558LC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS						LCC12,.12SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier			e4
LTC5562IUC#TRMPBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	10	PLASTIC/EPOXY		15 dBm		46 mA	COMPONENT	3.3	LCC10,.08SQ,20	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	.03 MHz	7000 MHz
AD831APZ-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3
HMC528LC4TR	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	24	CERAMIC	GAAS						LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
LTC5552IUDB#TRPBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	PLASTIC/EPOXY		20 dBm		150 mA	COMPONENT	3.3	LCC12,.08X.12,20	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	3000 MHz	20000 MHz
HMC219AMS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	10 dB		e3	4500 MHz	9000 MHz
AD8343ARUZ	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	14	PLASTIC/EPOXY	BIPOLAR		2	75 mA	COMPONENT	5	TSSOP14,.25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3	0 MHz	2500 MHz
HMC423MS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	11 dB		e3	600 MHz	1300 MHz
LTC5576IUF#PBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	16	PLASTIC/EPOXY		15 dBm		112 mA	COMPONENT	3.3/5	LCC16,.16SQ,25	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	3000 MHz	8000 MHz
AMMP-6545-BLKG	Broadcom	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers	125 Cel	-55 Cel		12 dB			18000 MHz	40000 MHz
SKY73020-11	Skyworks Solutions	DOUBLE BALANCED	SURFACE MOUNT	36	PLASTIC/EPOXY	BICMOS	20 dBm		420 mA	COMPONENT	5	LCC36,.25SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		HIGH RELIABILITY	e4	700 MHz	1000 MHz
ADL5801ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY		20 dBm		200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN		LOW NOISE	e3	10 MHz	6000 MHz
HMC338LC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS			40 mA		4	LCC12,.12SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
HMC412AMS8GETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY							TSSOP8,.19		RF/Microwave Mixers	85 Cel	-55 Cel
HMC523LC4TR	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	24	CERAMIC	GAAS						LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel	-55 Cel
HMC524ALC3B	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	12	CERAMIC	GAAS	20 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel	Tungsten/Nickel/Gold (W/Ni/Au)	13 dB			22000 MHz	32000 MHz
HMC553ALC3B	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	25 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		10 dB			6000 MHz	14000 MHz
HMC264LC3BRTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12		GAAS	13 dBm			COMPONENT	3/4	LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		12 dB			21000 MHz	31000 MHz
HMC220MS8TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel
HMC219AMS8TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel
HMC260LC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS						LCC12,.12SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
HMC260ALC3BTR-R5	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	27 dBm		3 mA	COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		12 dB			10000 MHz	26000 MHz
HMC213AMS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	10 dB		e3	1500 MHz	4500 MHz
HMC215LP4TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS			60 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
HMC220AMS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	10.5 dB		e3	5000 MHz	12000 MHz
HMC215LP4E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	22 dBm		70 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	11 dB	HIGH ISOLATION	e3	1700 MHz	4000 MHz
HMC264LC3B	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	13 dBm			COMPONENT	4	LCC12,.12SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	GOLD OVER NICKEL	12 dB	SMA	e4	21000 MHz	31000 MHz
HMC260LC3B	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	15 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	12 dB	SMA	e4	14000 MHz	26000 MHz
HMC258LC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS			57 mA		5	LCC12,.12SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
HMC214MS8	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	27 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	12 dB		e0	2400 MHz	4000 MHz
HMC260ALC3B	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	27 dBm		3 mA	COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		12 dB			10000 MHz	26000 MHz
HMC218BMS8GETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm		85 Cel	-40 Cel	Matte Tin (Sn) - annealed	8.5 dB	HIGH ISOLATION	e3	3500 MHz	8000 MHz
HMC272AMS8TR	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel
HMC220MS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)	10.5 dB		e3	5000 MHz	12000 MHz
HMC292LC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS						LCC12,.12SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
HMC264LM3	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT	3/4	LCC6(UNSPEC)	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	GOLD OVER NICKEL	12 dB		e4	20000 MHz	30000 MHz
HMC292LC3B	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	13 dBm			COMPONENT		LCC12,.12SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	12.5 dB	SMA	e4	16000 MHz	30000 MHz
HMC214MS8ETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	27 dBm			COMPONENT		TSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	12 dB	HIGH DYNAMIC RANGE	e3	2400 MHz	4000 MHz
HMC215LP4ETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS			60 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
HMC258LC3BRTR	Analog Devices		SURFACE MOUNT	12	CERAMIC	GAAS			57 mA		5	LCC12,.12SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
HMC219AMS8ETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3
HMC213AMS8ETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3
HMC208AMS8ETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	10.5 dB		e3	700 MHz	2000 MHz
HMC272MS8E	Analog Devices	SINGLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Matte Tin (Sn)	11 dB		e3	1700 MHz	3000 MHz
HMC207AS8TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						SOP8,.25		RF/Microwave Mixers	85 Cel	-40 Cel
HMC260ALC3BTR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	CERAMIC	GAAS	27 dBm		3 mA	COMPONENT		LCC12,.12SQ,20	50 ohm		85 Cel	-40 Cel		12 dB			10000 MHz	26000 MHz
HMC220AMS8	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	10.5 dB		e0	5000 MHz	12000 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.