Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2.8 mA |
6 |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
e4 |
|||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10.5 dB |
e3 |
5000 MHz |
12000 MHz |
||||||
Agilent Technologies |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
65 mA |
10 |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
Qorvo |
DOUBLE BALANCED |
THROUGH HOLE MOUNT |
8 |
METAL |
23.01 dBm |
COMPONENT |
DIP8,.2,200 |
50 ohm |
RF/Microwave Mixers |
100 Cel |
-54 Cel |
Bright Tin (Sn) |
8.5 dB |
e3 |
.5 MHz |
500 MHz |
||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
85 Cel |
-40 Cel |
10 dB |
1500 MHz |
4500 MHz |
|||||||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
23 dBm |
5.87 |
COMPONENT |
SMDIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
9.7 dB |
e3 |
2500 MHz |
6000 MHz |
|||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
17 dBm |
1.79 |
COMPONENT |
SMDIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
9.7 dB |
e0 |
2500 MHz |
6000 MHz |
||||||||
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
17 dBm |
6.15 |
COMPONENT |
SMDIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
9.7 dB |
e0 |
2500 MHz |
6000 MHz |
||||||||
|
Mini-circuits |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
17 dBm |
6.15 |
COMPONENT |
SMDIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
9.7 dB |
e3 |
2500 MHz |
6000 MHz |
|||||||
|
Broadcom |
IMAGE REJECTION |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
8 dB |
5000 MHz |
30000 MHz |
|||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10 dB |
e3 |
4500 MHz |
9000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
600 MHz |
1300 MHz |
|||||
|
Broadcom |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
12 dB |
18000 MHz |
40000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10 dB |
e3 |
1500 MHz |
4500 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10.5 dB |
e3 |
5000 MHz |
12000 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
12 dB |
e0 |
2400 MHz |
4000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
8.5 dB |
HIGH ISOLATION |
e3 |
3500 MHz |
8000 MHz |
||||||
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
10.5 dB |
e3 |
5000 MHz |
12000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
12 dB |
HIGH DYNAMIC RANGE |
e3 |
2400 MHz |
4000 MHz |
|||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10.5 dB |
e3 |
700 MHz |
2000 MHz |
||||||
|
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
11 dB |
e3 |
1700 MHz |
3000 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
10.5 dB |
e0 |
5000 MHz |
12000 MHz |
|||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
12 dB |
e3 |
2400 MHz |
4000 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
10.5 dB |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
10.5 dB |
e0 |
5000 MHz |
12000 MHz |
|||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
10 dB |
e0 |
1500 MHz |
4500 MHz |
|||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
11 dB |
e0 |
1700 MHz |
2200 MHz |
|||||||
Analog Devices |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
22 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
1500 MHz |
3800 MHz |
||||||
|
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
85 Cel |
-40 Cel |
11 dB |
HIGH DYNAMIC RANGE |
1700 MHz |
2400 MHz |
||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
11 dB |
e0 |
600 MHz |
1300 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
GAAS |
25 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
11 dB |
5500 MHz |
14000 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.