Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
GAAS |
25 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
11 dB |
5500 MHz |
14000 MHz |
||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
11 dB |
e0 |
600 MHz |
1300 MHz |
||||||
|
Analog Devices |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
1700 MHz |
2200 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
5 |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
12 dB |
e3 |
700 MHz |
1500 MHz |
|||||
|
Analog Devices |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
SOP8,.25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
11.5 dB |
e0 |
700 MHz |
1200 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
22 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
1500 MHz |
3800 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
SOP8,.25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
11.5 dB |
e3 |
700 MHz |
1200 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
22 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
TIN LEAD |
11 dB |
e0 |
1500 MHz |
3800 MHz |
|||||||
|
Analog Devices |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
3 |
SOLCC8,.08,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
3 |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
SOP8,.4 |
50 ohm |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12 dB |
e4 |
1800 MHz |
5000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
SOP8,.3 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
SOP8,.4 |
50 ohm |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
4000 MHz |
8000 MHz |
|||||||
NXP Semiconductors |
THROUGH HOLE MOUNT |
8 |
CERAMIC |
BIPOLAR |
2.8 mA |
6 |
DIP8,.3 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
NXP Semiconductors |
THROUGH HOLE MOUNT |
8 |
CERAMIC |
BIPOLAR |
2.8 mA |
6 |
DIP8,.3 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
NXP Semiconductors |
THROUGH HOLE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2.8 mA |
6 |
DIP8,.3 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2.8 mA |
6 |
SOP8,.25 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
NXP Semiconductors |
THROUGH HOLE MOUNT |
8 |
CERAMIC |
BIPOLAR |
38535Q/M;38534H;883B |
4 mA |
6 |
DIP8,.3 |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2.8 mA |
6 |
SOP8,.25 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
Infineon Technologies |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
3/7 |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
Infineon Technologies |
TRIPLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
COMPONENT |
2.7/4.5 |
SOP8,.25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
2000 MHz |
||||||||
Toshiba |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
7.5 mA |
5 |
TSSOP8,.1 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
Toshiba |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
7.5 mA |
COMPONENT |
5 |
TSSOP8,.16 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||
|
Toshiba |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
7.5 mA |
5 |
TSSOP8,.1 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
CERAMIC |
5 |
FL8,.2FL |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
15 mA |
3 |
SOLCC8,.08,20 |
RF/Microwave Mixers |
70 Cel |
-30 Cel |
|||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
5 |
SOP8,.25 |
RF/Microwave Mixers |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
|
Broadcom |
TRIPLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
12 dB |
18000 MHz |
40000 MHz |
|||||||||||
|
Broadcom |
TRIPLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
12 dB |
18000 MHz |
40000 MHz |
|||||||||||
|
Broadcom |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
12 dB |
18000 MHz |
40000 MHz |
|||||||||
|
Broadcom |
TRIPLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
12 dB |
18000 MHz |
40000 MHz |
|||||||||||
|
Broadcom |
IMAGE REJECTION |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
8 dB |
5000 MHz |
30000 MHz |
|||||||||||
|
Broadcom |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
12 dB |
18000 MHz |
40000 MHz |
|||||||||
|
Broadcom |
IMAGE REJECTION |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
8 dB |
5000 MHz |
30000 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.