PLASTIC/EPOXY RF/Microwave Mixers 250

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Maximum Conversion Loss	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
AD8342ACPZ-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	12 dBm		113 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3	50 MHz	2400 MHz
CMY210	Infineon Technologies	DOUBLE BALANCED	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS	17 dBm			COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Mixers				7 dB			500 MHz	2500 MHz
AD8343ARUZ-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	14	PLASTIC/EPOXY	BIPOLAR		2	75 mA	COMPONENT	5	TSSOP14,.25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3	0 MHz	2500 MHz
SA602AD/01-T	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			2.8 mA		6	SOP8,.25		RF/Microwave Mixers	85 Cel	-40 Cel	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)			e4
HMC207AS8ETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						SOP8,.25		RF/Microwave Mixers	85 Cel	-40 Cel
LTC5552IUDB#TRMPBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	PLASTIC/EPOXY		20 dBm		150 mA	COMPONENT	3.3	LCC12,.08X.12,20	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	3000 MHz	20000 MHz
HMC220AMS8ETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	10.5 dB		e3	5000 MHz	12000 MHz
IAM-82008	Agilent Technologies		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			65 mA		10	SOP8,.25		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)			e0
HMC1056LP4BETR	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	16 dBm			COMPONENT		LCC20,.16SQ,20	50 ohm		85 Cel	-40 Cel	MATTE TIN	11 dB		e3	8000 MHz	12000 MHz
ADE-1L	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		17 dBm	2.25		COMPONENT		FL6,.2,100	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	8 dB	IMAGE REJECTION	e0	2 MHz	500 MHz
ADE-1L+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		17 dBm	2.25		COMPONENT		FL6,.2,100	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN OVER NICKEL	8 dB	IMAGE REJECTION	e3	2 MHz	500 MHz
HMC213BMS8GE	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19			85 Cel	-40 Cel		10 dB			1500 MHz	4500 MHz
SKY-60+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		23 dBm	5.87		COMPONENT		SMDIP8,.3		RF/Microwave Mixers	85 Cel	-40 Cel	Tin (Sn) - with Nickel (Ni) barrier	9.7 dB		e3	2500 MHz	6000 MHz
SKY-60	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		17 dBm	1.79		COMPONENT		SMDIP8,.3		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	9.7 dB		e0	2500 MHz	6000 MHz
SKY-60LH	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		17 dBm	6.15		COMPONENT		SMDIP8,.3		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	9.7 dB		e0	2500 MHz	6000 MHz
SKY-60LH+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		17 dBm	6.15		COMPONENT		SMDIP8,.3		RF/Microwave Mixers	85 Cel	-40 Cel	Tin (Sn) - with Nickel (Ni) barrier	9.7 dB		e3	2500 MHz	6000 MHz
SYM-18H	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		23 dBm	2.61		COMPONENT		LCC6/8,.37X.5,170		RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	8.9 dB	HIGH ISOLATION	e0	5 MHz	1800 MHz
SYM-18H+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		23 dBm	2.61		COMPONENT		LCC6/8,.37X.5,170		RF/Microwave Mixers	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	8.9 dB	HIGH ISOLATION	e4	5 MHz	1800 MHz
SYM-30DHW+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		23 dBm	1.67		COMPONENT		LCC6/8,.37X.5,170		RF/Microwave Mixers	85 Cel	-40 Cel	GOLD OVER NICKEL	9.1 dB	USABLE TO 3 GHZ	e4	5 MHz	3000 MHz
SYM-30DHW	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		23 dBm	1.67		COMPONENT		LCC6/8,.37X.5,170		RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	9.1 dB	USABLE TO 3 GHZ	e0	5 MHz	3000 MHz
AD608AR-REEL	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	16	PLASTIC/EPOXY					MODULE	3	SOP16,.25	50 ohm	RF/Microwave Mixers	85 Cel	-25 Cel	TIN LEAD			e0
AD831AP-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD			e0
ADE-1LH+	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		17 dBm	3.01		COMPONENT		FL6,.2,100		RF/Microwave Mixers	85 Cel	-40 Cel	Tin (Sn) - with Nickel (Ni) barrier	8.2 dB		e3	.5 MHz	500 MHz
ADE-1LH	Mini-circuits	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY		17 dBm	3.01		COMPONENT		FL6,.2,100		RF/Microwave Mixers	85 Cel	-40 Cel	TIN LEAD	8.2 dB		e0	.5 MHz	500 MHz
AMMP-6530-TR1	Broadcom	IMAGE REJECTION	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers				8 dB			5000 MHz	30000 MHz
CMY211	Infineon Technologies	DOUBLE BALANCED	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS	17 dBm			COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Mixers			Tin/Lead (Sn/Pb)	7.5 dB		e0	500 MHz	2500 MHz
HMC1063LP3ETR	Analog Devices	IMAGE REJECTION	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		LCC16,.12SQ,20	50 ohm		85 Cel	-40 Cel	MATTE TIN			e3	24000 MHz	28000 MHz
LTC5562IUC#TRMPBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	10	PLASTIC/EPOXY		15 dBm		46 mA	COMPONENT	3.3	LCC10,.08SQ,20	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	.03 MHz	7000 MHz
AD831APZ-REEL7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR				MODULE	+-5	LDCC20,.4SQ	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3
LTC5552IUDB#TRPBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	12	PLASTIC/EPOXY		20 dBm		150 mA	COMPONENT	3.3	LCC12,.08X.12,20	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	3000 MHz	20000 MHz
HMC219AMS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	10 dB		e3	4500 MHz	9000 MHz
AD8343ARUZ	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	14	PLASTIC/EPOXY	BIPOLAR		2	75 mA	COMPONENT	5	TSSOP14,.25	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN			e3	0 MHz	2500 MHz
HMC423MS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT	3	TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	11 dB		e3	600 MHz	1300 MHz
LTC5576IUF#PBF	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	16	PLASTIC/EPOXY		15 dBm		112 mA	COMPONENT	3.3/5	LCC16,.16SQ,25	50 ohm		105 Cel	-40 Cel	MATTE TIN			e3	3000 MHz	8000 MHz
MC12002P	Motorola	DOUBLE BALANCED	THROUGH HOLE MOUNT	14	PLASTIC/EPOXY	ECL			16 mA			DIP14,.3		RF/Microwave Mixers	85 Cel	-30 Cel	Tin/Lead (Sn/Pb)			e0
AMMP-6545-BLKG	Broadcom	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY		25 dBm			COMPONENT		LCC8,.2SQ,28	50 ohm	RF/Microwave Mixers	125 Cel	-55 Cel		12 dB			18000 MHz	40000 MHz
SKY73020-11	Skyworks Solutions	DOUBLE BALANCED	SURFACE MOUNT	36	PLASTIC/EPOXY	BICMOS	20 dBm		420 mA	COMPONENT	5	LCC36,.25SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		HIGH RELIABILITY	e4	700 MHz	1000 MHz
ADL5801ACPZ-R7	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY		20 dBm		200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN		LOW NOISE	e3	10 MHz	6000 MHz
HMC412AMS8GETR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY							TSSOP8,.19		RF/Microwave Mixers	85 Cel	-55 Cel
TL442CNP3	Texas Instruments		THROUGH HOLE MOUNT	14	PLASTIC/EPOXY	BIPOLAR						DIP14,.3		RF/Microwave Mixers	70 Cel	0 Cel
TL442CN3	Texas Instruments		THROUGH HOLE MOUNT	14	PLASTIC/EPOXY	BIPOLAR						DIP14,.3		RF/Microwave Mixers	70 Cel	0 Cel
TL442CN	Texas Instruments		THROUGH HOLE MOUNT	14	PLASTIC/EPOXY	BIPOLAR						DIP14,.3		RF/Microwave Mixers	70 Cel	0 Cel
HMC220MS8TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel
HMC219AMS8TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						TSSOP8,.19		RF/Microwave Mixers	85 Cel	-40 Cel
HMC213AMS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	10 dB		e3	1500 MHz	4500 MHz
HMC215LP4TR	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS			60 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel	-40 Cel
HMC220AMS8E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	13 dBm			COMPONENT		TSOP8,.19	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	10.5 dB		e3	5000 MHz	12000 MHz
HMC215LP4E	Analog Devices	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	22 dBm		70 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Mixers	85 Cel	-40 Cel	MATTE TIN	11 dB	HIGH ISOLATION	e3	1700 MHz	4000 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.