Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
CMOS |
15 dBm |
105 mA |
COMPONENT |
3.3 |
LCC16,.16SQ,25 |
50 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
e3 |
300 MHz |
4000 MHz |
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|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
15 dBm |
112 mA |
COMPONENT |
3.3/5 |
LCC16,.16SQ,25 |
50 ohm |
105 Cel |
-40 Cel |
MATTE TIN |
e3 |
3000 MHz |
8000 MHz |
|||||||
Onsemi |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
FL6,.07,25 |
RF/Microwave Mixers |
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NXP Semiconductors |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
5 |
SSOP28,.3 |
RF/Microwave Mixers |
85 Cel |
-20 Cel |
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|
NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
2 |
8 mA |
COMPONENT |
2.8 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Mixers |
Tin (Sn) |
HIGH ISOLATION |
e3 |
880 MHz |
2450 MHz |
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NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
3 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
800 MHz |
1000 MHz |
|||||||||||
NXP Semiconductors |
THROUGH HOLE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2.8 mA |
6 |
DIP8,.3 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2.8 mA |
6 |
SOP8,.25 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
|
NXP Semiconductors |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
5 |
LCC16,.1X.14,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
2 |
8 mA |
COMPONENT |
2.8 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Mixers |
Tin (Sn) |
e3 |
880 MHz |
2450 MHz |
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NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
65 mA |
5 |
SSOP24,.3 |
RF/Microwave Mixers |
85 Cel |
-20 Cel |
|||||||||||||
NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
20 dBm |
COMPONENT |
3/5 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
800 MHz |
1000 MHz |
|||||||||||
NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
65 mA |
5 |
SSOP24,.3 |
RF/Microwave Mixers |
85 Cel |
-20 Cel |
|||||||||||||
NXP Semiconductors |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2.8 mA |
6 |
SOP8,.25 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
NXP Semiconductors |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
26 mA |
3 |
SOP16,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
Infineon Technologies |
TRIPLE BALANCED |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
BIPOLAR |
COMPONENT |
2.7/4.5 |
TSSOP10,.19,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
3000 MHz |
||||||||
Infineon Technologies |
DOUBLE BALANCED |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
BIPOLAR |
2.1 mA |
COMPONENT |
6 |
SOP14,.25 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||
Infineon Technologies |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
3/7 |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
Infineon Technologies |
SURFACE MOUNT |
7 |
PLASTIC/EPOXY |
GAAS |
2.5 mA |
3.3/5 |
SO7,.28 |
RF/Microwave Mixers |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
|
Infineon Technologies |
TRIPLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
13.1 mA |
COMPONENT |
2.7/4.5 |
TSSOP16,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
LOW NOISE |
3000 MHz |
|||||||||
Infineon Technologies |
TRIPLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
COMPONENT |
2.7/4.5 |
SOP8,.25 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
2000 MHz |
||||||||
Infineon Technologies |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
5,5/7 |
SOP20,.4 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Infineon Technologies |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
BIPOLAR |
6 |
SOP14,.25 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
Infineon Technologies |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
BIPOLAR |
2.9 mA |
12 |
SOP14,.25 |
RF/Microwave Mixers |
70 Cel |
-15 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
Infineon Technologies |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
3.9 mA |
5 |
SOP14,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
Infineon Technologies |
DOUBLE BALANCED |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
33 mA |
5 |
SOP28,.4 |
RF/Microwave Mixers |
80 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
|
Maxim Integrated |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
420 mA |
5 |
LCC36,.25SQ,20 |
RF/Microwave Up/Down Converters |
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|
Maxim Integrated |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
420 mA |
5 |
LCC36,.25SQ,20 |
RF/Microwave Up/Down Converters |
MATTE TIN |
e3 |
||||||||||||
Maxim Integrated |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
1.5 |
110 mA |
COMPONENT |
5 |
LCC36,.25SQ,20 |
50 ohm |
RF/Microwave Up/Down Converters |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1700 MHz |
2200 MHz |
|||||
Maxim Integrated |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
1.5 |
110 mA |
COMPONENT |
5 |
LCC36,.25SQ,20 |
50 ohm |
RF/Microwave Up/Down Converters |
85 Cel |
-40 Cel |
TIN LEAD |
e0 |
1700 MHz |
2200 MHz |
|||||
Toshiba |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
7.5 mA |
5 |
TSSOP8,.1 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
Toshiba |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
7.5 mA |
COMPONENT |
5 |
TSSOP8,.16 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||
|
Toshiba |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
7.5 mA |
5 |
TSSOP8,.1 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BIPOLAR |
2.2 mA |
3 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-30 Cel |
|||||||||||||
Renesas Electronics |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
BIPOLAR |
4.3 mA |
3 |
SOP14(UNSPEC) |
RF/Microwave Mixers |
85 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BIPOLAR |
2.2 mA |
3 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-30 Cel |
|||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
215 mA |
5 |
LCC20,.20SQ,25 |
RF/Microwave Mixers |
TIN |
e3 |
||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BIPOLAR |
8.5 mA |
3 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
Renesas Electronics |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BIPOLAR |
2.2 mA |
3 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
15 mA |
3 |
SOLCC8,.08,20 |
RF/Microwave Mixers |
70 Cel |
-30 Cel |
|||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BIPOLAR |
2.2 mA |
3 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-30 Cel |
|||||||||||||
Renesas Electronics |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
BIPOLAR |
8.5 mA |
3 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
345 mA |
5 |
LCC36,.25SQ,20 |
RF/Microwave Mixers |
TIN |
e3 |
||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
5 |
SOP8,.25 |
RF/Microwave Mixers |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
|
Broadcom |
TRIPLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
12 dB |
18000 MHz |
40000 MHz |
|||||||||||
|
Broadcom |
TRIPLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
12 dB |
18000 MHz |
40000 MHz |
|||||||||||
|
Broadcom |
TRIPLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
30 dBm |
30 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Mixers |
Matte Tin (Sn) |
6.9 dB |
e3 |
400 MHz |
3500 MHz |
||||||
|
Broadcom |
TRIPLE BALANCED |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
30 dBm |
125 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Mixers |
Matte Tin (Sn) |
e3 |
400 MHz |
3000 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.