DOUBLE BALANCED RF/Microwave Mixers 436

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum Conversion Loss Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC8804

Analog Devices

DOUBLE BALANCED

38535V;34K;Cls S

20 dBm

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-40 Cel

14 dB

6000 MHz

18000 MHz

HMC129LC4TR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

15 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

Gold Flash (Au) - with Nickel (Ni) barrier

9 dB

4000 MHz

8000 MHz

HMC798ALC4TR

Analog Devices

DOUBLE BALANCED

13 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

13.5 dB

24000 MHz

34000 MHz

HMC141LH5

Analog Devices

DOUBLE BALANCED

13 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

13 dB

HIGH RELIABILITY

e4

7000 MHz

14000 MHz

HMC130

Analog Devices

DOUBLE BALANCED

GAAS

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

Gold (Au)

9 dB

e4

6000 MHz

11000 MHz

LTC5542IUH#TRPBF

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

1600 MHz

2700 MHz

LTC5542IUH#PBF

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

1600 MHz

2700 MHz

HMC144LC4TR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16X.2,20

RF/Microwave Mixers

85 Cel

-40 Cel

HMC170C8TR

Analog Devices

DOUBLE BALANCED

GOLD OVER NICKEL

e4

HMC787AG-SX

Analog Devices

DOUBLE BALANCED

HMC787AG

Analog Devices

DOUBLE BALANCED

HMC175MS8E

Analog Devices

DOUBLE BALANCED

13 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

MATTE TIN

11 dB

e3

1700 MHz

4500 MHz

HMC129ALC4TR

Analog Devices

DOUBLE BALANCED

25 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

9 dB

4000 MHz

8000 MHz

LTC5543IUH#TRPBF

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

2300 MHz

4000 MHz

HMC798ALC4TR-R5

Analog Devices

DOUBLE BALANCED

13 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

13.5 dB

24000 MHz

34000 MHz

LTC5540IUH#PBF

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

600 MHz

1300 MHz

HMC129ALC4

Analog Devices

DOUBLE BALANCED

25 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

9 dB

4000 MHz

8000 MHz

HMC1048ALC3BTR-R5

Analog Devices

DOUBLE BALANCED

16 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

14 dB

2250 MHz

18000 MHz

LTC5566IUH#TRPBF

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

32

PLASTIC/EPOXY

CMOS

20 dBm

1.92

450 mA

COMPONENT

3.3

LCC32,.2SQ,20

300 ohm

105 Cel

-40 Cel

MATTE TIN

e3

300 MHz

6000 MHz

HMC711LC5TR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

32

CERAMIC

GAAS

5

LCC32,.2SQ,20

RF/Microwave Up/Down Converters

85 Cel

-40 Cel

HMC774

Analog Devices

DOUBLE BALANCED

21 dBm

COMPONENT

50 ohm

85 Cel

-55 Cel

13 dB

7000 MHz

43000 MHz

LTC5540IUH#TRPBF

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

600 MHz

1300 MHz

LTC5567IUF#TRPBF

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

16

PLASTIC/EPOXY

CMOS

15 dBm

105 mA

COMPONENT

3.3

LCC16,.16SQ,25

50 ohm

105 Cel

-40 Cel

MATTE TIN

e3

300 MHz

4000 MHz

HMC129LC4

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

15 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

9 dB

e4

4000 MHz

8000 MHz

HMC773A

Analog Devices

DOUBLE BALANCED

21 dBm

COMPONENT

50 ohm

85 Cel

-55 Cel

13 dB

6000 MHz

26000 MHz

HMC1093

Analog Devices

DOUBLE BALANCED

GAAS

210 mA

3

DIE OR CHIP

RF/Microwave Mixers

85 Cel

-55 Cel

LTC5567IUF#PBF

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

16

PLASTIC/EPOXY

CMOS

15 dBm

105 mA

COMPONENT

3.3

LCC16,.16SQ,25

50 ohm

105 Cel

-40 Cel

MATTE TIN

e3

300 MHz

4000 MHz

HMC128

Analog Devices

DOUBLE BALANCED

GAAS

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

Gold (Au)

10 dB

e4

1800 MHz

5000 MHz

HMC144LC4

Analog Devices

DOUBLE BALANCED

15 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

Gold Flash (Au) - with Nickel (Ni) barrier

13 dB

6000 MHz

20000 MHz

HMC171C8TR

Analog Devices

DOUBLE BALANCED

Gold (Au) - with Nickel (Ni) barrier

e4

LTC5576IUF#TRPBF

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

16

PLASTIC/EPOXY

15 dBm

112 mA

COMPONENT

3.3/5

LCC16,.16SQ,25

50 ohm

105 Cel

-40 Cel

MATTE TIN

e3

3000 MHz

8000 MHz

HMC1048ALC3B

Analog Devices

DOUBLE BALANCED

16 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

TUNGSTEN NICKEL GOLD

14 dB

2250 MHz

18000 MHz

HMC140

Analog Devices

DOUBLE BALANCED

GAAS

COMPONENT

DIE OR CHIP

RF/Microwave Mixers

125 Cel

-55 Cel

12 dB

1000 MHz

2000 MHz

SA602AD,623

NXP Semiconductors

DOUBLE BALANCED

COMPONENT

85 Cel

-40 Cel

SA631DK-T

NXP Semiconductors

DOUBLE BALANCED

20 dBm

85 Cel

-40 Cel

800 MHz

1000 MHz

SA611DH

NXP Semiconductors

DOUBLE BALANCED

20 dBm

85 Cel

-40 Cel

800 MHz

1000 MHz

SA600D-T

NXP Semiconductors

DOUBLE BALANCED

20 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

800 MHz

1200 MHz

SA621DK

NXP Semiconductors

DOUBLE BALANCED

20 dBm

85 Cel

-40 Cel

HIGH DYNAMIC RANGE

800 MHz

1000 MHz

SA611DK-T

NXP Semiconductors

DOUBLE BALANCED

20 dBm

COMPONENT

85 Cel

-40 Cel

800 MHz

1000 MHz

BGA2022

NXP Semiconductors

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

2

8 mA

COMPONENT

2.8

TSSOP6,.08

50 ohm

RF/Microwave Mixers

Tin (Sn)

HIGH ISOLATION

e3

880 MHz

2450 MHz

NE600D-T

NXP Semiconductors

DOUBLE BALANCED

20 dBm

COMPONENT

50 ohm

70 Cel

0 Cel

800 MHz

1200 MHz

SA631DK

NXP Semiconductors

DOUBLE BALANCED

SURFACE MOUNT

20

PLASTIC/EPOXY

BICMOS

20 dBm

3

SSOP20,.25

RF/Microwave Mixers

85 Cel

-40 Cel

800 MHz

1000 MHz

BGA2022T/R

NXP Semiconductors

DOUBLE BALANCED

10 dBm

2

COMPONENT

50 ohm

Tin (Sn)

HIGH ISOLATION

e3

880 MHz

2450 MHz

934056238115

NXP Semiconductors

DOUBLE BALANCED

10 dBm

2

COMPONENT

50 ohm

Tin (Sn)

HIGH ISOLATION

e3

880 MHz

2450 MHz

BGA2021

NXP Semiconductors

DOUBLE BALANCED

3 dBm

COMPONENT

50 ohm

500 MHz

2500 MHz

SA600D

NXP Semiconductors

DOUBLE BALANCED

20 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

800 MHz

1200 MHz

SA621DK-T

NXP Semiconductors

DOUBLE BALANCED

20 dBm

85 Cel

-40 Cel

HIGH DYNAMIC RANGE

800 MHz

1000 MHz

NE600D

NXP Semiconductors

DOUBLE BALANCED

20 dBm

COMPONENT

50 ohm

70 Cel

0 Cel

800 MHz

1200 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.