Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
2 |
8 mA |
COMPONENT |
2.8 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Mixers |
Tin (Sn) |
e3 |
880 MHz |
2450 MHz |
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NXP Semiconductors |
DOUBLE BALANCED |
20 dBm |
85 Cel |
-40 Cel |
800 MHz |
1000 MHz |
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NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
65 mA |
5 |
SSOP24,.3 |
RF/Microwave Mixers |
85 Cel |
-20 Cel |
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NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
20 dBm |
COMPONENT |
3/5 |
SSOP20,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
800 MHz |
1000 MHz |
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NXP Semiconductors |
DOUBLE BALANCED |
10 dBm |
2 |
COMPONENT |
50 ohm |
TIN |
HIGH ISOLATION |
e3 |
880 MHz |
2450 MHz |
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NXP Semiconductors |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
65 mA |
5 |
SSOP24,.3 |
RF/Microwave Mixers |
85 Cel |
-20 Cel |
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Infineon Technologies |
DOUBLE BALANCED |
COMPONENT |
800 MHz |
2500 MHz |
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Infineon Technologies |
DOUBLE BALANCED |
10 dBm |
COMPONENT |
50 ohm |
500 MHz |
2500 MHz |
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Infineon Technologies |
DOUBLE BALANCED |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
BIPOLAR |
2.1 mA |
COMPONENT |
6 |
SOP14,.25 |
RF/Microwave Mixers |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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Infineon Technologies |
DOUBLE BALANCED |
COMPONENT |
800 MHz |
2500 MHz |
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Infineon Technologies |
DOUBLE BALANCED |
COMPONENT |
50 ohm |
500 MHz |
2500 MHz |
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Infineon Technologies |
DOUBLE BALANCED |
COMPONENT |
85 Cel |
-30 Cel |
2000 MHz |
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Infineon Technologies |
DOUBLE BALANCED |
COMPONENT |
50 ohm |
77 MHz |
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Infineon Technologies |
DOUBLE BALANCED |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
33 mA |
5 |
SOP28,.4 |
RF/Microwave Mixers |
80 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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|
Maxim Integrated |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
420 mA |
5 |
LCC36,.25SQ,20 |
RF/Microwave Up/Down Converters |
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|
Maxim Integrated |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
420 mA |
5 |
LCC36,.25SQ,20 |
RF/Microwave Up/Down Converters |
MATTE TIN |
e3 |
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Maxim Integrated |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
1.5 |
110 mA |
COMPONENT |
5 |
LCC36,.25SQ,20 |
50 ohm |
RF/Microwave Up/Down Converters |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1700 MHz |
2200 MHz |
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Maxim Integrated |
DOUBLE BALANCED |
SURFACE MOUNT |
36 |
PLASTIC/EPOXY |
BICMOS |
20 dBm |
1.5 |
110 mA |
COMPONENT |
5 |
LCC36,.25SQ,20 |
50 ohm |
RF/Microwave Up/Down Converters |
85 Cel |
-40 Cel |
TIN LEAD |
e0 |
1700 MHz |
2200 MHz |
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Toshiba |
DOUBLE BALANCED |
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Toshiba |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
7.5 mA |
COMPONENT |
5 |
TSSOP8,.16 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
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Toshiba |
DOUBLE BALANCED |
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Toshiba |
DOUBLE BALANCED |
85 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
10 MHz |
100 MHz |
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Renesas Electronics |
DOUBLE BALANCED |
Tin/Lead (Sn/Pb) |
e0 |
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Renesas Electronics |
DOUBLE BALANCED |
Tin/Lead (Sn/Pb) |
e0 |
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Renesas Electronics |
DOUBLE BALANCED |
COMPONENT |
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|
Renesas Electronics |
DOUBLE BALANCED |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
800 MHz |
2500 MHz |
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Renesas Electronics |
DOUBLE BALANCED |
COMPONENT |
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Renesas Electronics |
DOUBLE BALANCED |
COMPONENT |
85 Cel |
-30 Cel |
LOW NOISE |
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Renesas Electronics |
DOUBLE BALANCED |
Tin/Lead (Sn/Pb) |
e0 |
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Renesas Electronics |
DOUBLE BALANCED |
COMPONENT |
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Renesas Electronics |
DOUBLE BALANCED |
Tin/Lead (Sn/Pb) |
e0 |
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|
Renesas Electronics |
DOUBLE BALANCED |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
e6 |
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Renesas Electronics |
DOUBLE BALANCED |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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|
Renesas Electronics |
DOUBLE BALANCED |
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|
Renesas Electronics |
DOUBLE BALANCED |
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|
Renesas Electronics |
DOUBLE BALANCED |
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|
Renesas Electronics |
DOUBLE BALANCED |
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Renesas Electronics |
DOUBLE BALANCED |
Tin/Lead (Sn/Pb) |
e0 |
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|
Broadcom |
DOUBLE BALANCED |
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|
Broadcom |
DOUBLE BALANCED |
COMPONENT |
2/5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
12 dB |
USABLE TO 42 GHZ |
18000 MHz |
36000 MHz |
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|
Broadcom |
DOUBLE BALANCED |
COMPONENT |
2/5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
12 dB |
USABLE TO 42 GHZ |
18000 MHz |
36000 MHz |
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|
Broadcom |
DOUBLE BALANCED |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
140 Cel |
-55 Cel |
13 dB |
18000 MHz |
42000 MHz |
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|
Broadcom |
DOUBLE BALANCED |
COMPONENT |
50 ohm |
140 Cel |
-55 Cel |
13 dB |
18000 MHz |
42000 MHz |
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|
Broadcom |
DOUBLE BALANCED |
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Broadcom |
DOUBLE BALANCED |
GAAS |
4.5 |
DIE OR CHIP |
RF/Microwave Mixers |
70 Cel |
-55 Cel |
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Broadcom |
DOUBLE BALANCED |
23 dBm |
1.5 |
MODULE |
50 ohm |
100 Cel |
-55 Cel |
6 dB |
HIGH ISOLATION |
3700 MHz |
4200 MHz |
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Broadcom |
DOUBLE BALANCED |
23 dBm |
1.5 |
MODULE |
50 ohm |
100 Cel |
-55 Cel |
7 dB |
1 MHz |
500 MHz |
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|
Broadcom |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
25 dBm |
COMPONENT |
LCC8,.2SQ,28 |
50 ohm |
RF/Microwave Mixers |
125 Cel |
-55 Cel |
12 dB |
18000 MHz |
40000 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.