Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum Conversion Loss | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DOUBLE BALANCED |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
17 dBm |
COMPONENT |
3 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Mixers |
7 dB |
500 MHz |
2500 MHz |
||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
SOP8,.25 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
6000 MHz |
10000 MHz |
|||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
6000 MHz |
10000 MHz |
|||||||
|
Analog Devices |
TRIPLE BALANCED |
GAAS |
28 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
11 dB |
3000 MHz |
10000 MHz |
||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10.5 dB |
e3 |
5000 MHz |
12000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tungsten/Nickel/Gold (W/Ni/Au) |
|||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 dB |
e4 |
6000 MHz |
10000 MHz |
|||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
GAAS |
16 dBm |
COMPONENT |
LCC20,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
8000 MHz |
12000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
15 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
12 dB |
e4 |
5000 MHz |
20000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
7 |
GAAS |
25 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
85 Cel |
-40 Cel |
10 dB |
6000 MHz |
14000 MHz |
||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
85 Cel |
-40 Cel |
10 dB |
1500 MHz |
4500 MHz |
|||||||||||
Infineon Technologies |
DOUBLE BALANCED |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
17 dBm |
COMPONENT |
3 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Mixers |
Tin/Lead (Sn/Pb) |
7.5 dB |
e0 |
500 MHz |
2500 MHz |
||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
24000 MHz |
28000 MHz |
||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
25 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
10 dB |
6000 MHz |
14000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10 dB |
e3 |
4500 MHz |
9000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
e3 |
600 MHz |
1300 MHz |
|||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
9 dB |
e4 |
4000 MHz |
8000 MHz |
||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
40 mA |
4 |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
||||||||||||||
|
Analog Devices |
IMAGE REJECTION |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
20 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
Tungsten/Nickel/Gold (W/Ni/Au) |
13 dB |
22000 MHz |
32000 MHz |
||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
25 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
10 dB |
6000 MHz |
14000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
GAAS |
13 dBm |
COMPONENT |
3/4 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
12 dB |
21000 MHz |
31000 MHz |
|||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
27 dBm |
3 mA |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
12 dB |
10000 MHz |
26000 MHz |
||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10 dB |
e3 |
1500 MHz |
4500 MHz |
||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
60 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
10.5 dB |
e3 |
5000 MHz |
12000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
13 dBm |
50 mA |
COMPONENT |
3/4 |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
GOLD |
13 dB |
e4 |
20000 MHz |
32000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
22 dBm |
70 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
11 dB |
HIGH ISOLATION |
e3 |
1700 MHz |
4000 MHz |
|||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
13 dBm |
COMPONENT |
4 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
12 dB |
SMA |
e4 |
21000 MHz |
31000 MHz |
||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
15 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12 dB |
SMA |
e4 |
14000 MHz |
26000 MHz |
|||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
13 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
11 dB |
e4 |
18000 MHz |
32000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
57 mA |
5 |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
27 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
12 dB |
e0 |
2400 MHz |
4000 MHz |
|||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
27 dBm |
3 mA |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
12 dB |
10000 MHz |
26000 MHz |
||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
8.5 dB |
HIGH ISOLATION |
e3 |
3500 MHz |
8000 MHz |
||||||
Analog Devices |
SINGLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
TSSOP8,.19 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
TSSOP8,.19 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
10.5 dB |
e3 |
5000 MHz |
12000 MHz |
||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
LCC12,.12SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
DOUBLE BALANCED |
GAAS |
15 dBm |
COMPONENT |
DIE OR CHIP |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-55 Cel |
Gold (Au) |
10.5 dB |
e4 |
14000 MHz |
26000 MHz |
|||||||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
COMPONENT |
3/4 |
LCC6(UNSPEC) |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
12 dB |
e4 |
20000 MHz |
30000 MHz |
|||||
|
Analog Devices |
DOUBLE BALANCED |
SURFACE MOUNT |
12 |
CERAMIC |
GAAS |
13 dBm |
COMPONENT |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12.5 dB |
SMA |
e4 |
16000 MHz |
30000 MHz |
RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.
RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.
RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.