GAAS RF/Microwave Mixers 194

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum Conversion Loss Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

CMY210

Infineon Technologies

DOUBLE BALANCED

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

17 dBm

COMPONENT

3

TSOP5/6,.11,37

50 ohm

RF/Microwave Mixers

7 dB

500 MHz

2500 MHz

HMC207AS8ETR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

SOP8,.25

RF/Microwave Mixers

85 Cel

-40 Cel

HMC520ALC4

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC520ALC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC787ALC3B

Analog Devices

TRIPLE BALANCED

GAAS

28 dBm

COMPONENT

50 ohm

85 Cel

-40 Cel

TUNGSTEN NICKEL GOLD

11 dB

3000 MHz

10000 MHz

HMC521LC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-55 Cel

HMC220AMS8ETR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

10.5 dB

e3

5000 MHz

12000 MHz

HMC557ALC4

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

HMC520ALC4TR-R5

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

20 dBm

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 dB

e4

6000 MHz

10000 MHz

HMC1056LP4BETR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

20

PLASTIC/EPOXY

GAAS

16 dBm

COMPONENT

LCC20,.16SQ,20

50 ohm

85 Cel

-40 Cel

MATTE TIN

11 dB

e3

8000 MHz

12000 MHz

HMC143

Analog Devices

DOUBLE BALANCED

GAAS

15 dBm

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

Gold (Au)

12 dB

e4

5000 MHz

20000 MHz

HMC553AG-SX

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

7

GAAS

25 dBm

COMPONENT

DIE OR CHIP

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

HMC213BMS8GE

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSSOP8,.19

85 Cel

-40 Cel

10 dB

1500 MHz

4500 MHz

CMY211

Infineon Technologies

DOUBLE BALANCED

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

17 dBm

COMPONENT

3

TSOP5/6,.11,37

50 ohm

RF/Microwave Mixers

Tin/Lead (Sn/Pb)

7.5 dB

e0

500 MHz

2500 MHz

HMC1063LP3ETR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

LCC16,.12SQ,20

50 ohm

85 Cel

-40 Cel

MATTE TIN

e3

24000 MHz

28000 MHz

HMC553ALC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

HMC558LC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

LCC12,.12SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

e4

HMC528LC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

HMC219AMS8E

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

10 dB

e3

4500 MHz

9000 MHz

HMC423MS8E

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

3

TSSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

11 dB

e3

600 MHz

1300 MHz

HMC129

Analog Devices

DOUBLE BALANCED

GAAS

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

Gold (Au)

9 dB

e4

4000 MHz

8000 MHz

HMC338LC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

40 mA

4

LCC12,.12SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

HMC523LC4TR

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

24

CERAMIC

GAAS

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-55 Cel

HMC524ALC3B

Analog Devices

IMAGE REJECTION

SURFACE MOUNT

12

CERAMIC

GAAS

20 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

Tungsten/Nickel/Gold (W/Ni/Au)

13 dB

22000 MHz

32000 MHz

HMC553ALC3B

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

25 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

10 dB

6000 MHz

14000 MHz

HMC264LC3BRTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

GAAS

13 dBm

COMPONENT

3/4

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

12 dB

21000 MHz

31000 MHz

HMC220MS8TR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

TSSOP8,.19

RF/Microwave Mixers

85 Cel

-40 Cel

HMC219AMS8TR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

TSSOP8,.19

RF/Microwave Mixers

85 Cel

-40 Cel

HMC260LC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

LCC12,.12SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

HMC260ALC3BTR-R5

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

27 dBm

3 mA

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

12 dB

10000 MHz

26000 MHz

HMC213AMS8E

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

10 dB

e3

1500 MHz

4500 MHz

HMC215LP4TR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

60 mA

5

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

HMC220AMS8E

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

10.5 dB

e3

5000 MHz

12000 MHz

HMC264

Analog Devices

DOUBLE BALANCED

GAAS

13 dBm

50 mA

COMPONENT

3/4

DIE OR CHIP

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

GOLD

13 dB

e4

20000 MHz

32000 MHz

HMC215LP4E

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

22 dBm

70 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

11 dB

HIGH ISOLATION

e3

1700 MHz

4000 MHz

HMC264LC3B

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

13 dBm

COMPONENT

4

LCC12,.12SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

GOLD OVER NICKEL

12 dB

SMA

e4

21000 MHz

31000 MHz

HMC260LC3B

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

15 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

12 dB

SMA

e4

14000 MHz

26000 MHz

HMC292

Analog Devices

DOUBLE BALANCED

GAAS

13 dBm

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

Gold (Au)

11 dB

e4

18000 MHz

32000 MHz

HMC258LC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

57 mA

5

LCC12,.12SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

HMC214MS8

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

27 dBm

COMPONENT

TSSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

12 dB

e0

2400 MHz

4000 MHz

HMC260ALC3B

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

27 dBm

3 mA

COMPONENT

LCC12,.12SQ,20

50 ohm

85 Cel

-40 Cel

12 dB

10000 MHz

26000 MHz

HMC218BMS8GETR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSSOP8,.19

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

8.5 dB

HIGH ISOLATION

e3

3500 MHz

8000 MHz

HMC272AMS8TR

Analog Devices

SINGLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

TSSOP8,.19

RF/Microwave Mixers

85 Cel

-40 Cel

HMC220MS8E

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

TSSOP8,.19

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

Matte Tin (Sn)

10.5 dB

e3

5000 MHz

12000 MHz

HMC292LC3BTR

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

LCC12,.12SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

HMC260

Analog Devices

DOUBLE BALANCED

GAAS

15 dBm

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Mixers

85 Cel

-55 Cel

Gold (Au)

10.5 dB

e4

14000 MHz

26000 MHz

HMC264LM3

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

13 dBm

COMPONENT

3/4

LCC6(UNSPEC)

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

GOLD OVER NICKEL

12 dB

e4

20000 MHz

30000 MHz

HMC292LC3B

Analog Devices

DOUBLE BALANCED

SURFACE MOUNT

12

CERAMIC

GAAS

13 dBm

COMPONENT

LCC12,.12SQ,20

50 ohm

RF/Microwave Mixers

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

12.5 dB

SMA

e4

16000 MHz

30000 MHz

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.