NXP Semiconductors RF/Microwave Mixers 31

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
SA602AD/01-T	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				2.8 mA		6	SOP8,.25		RF/Microwave Mixers	85 Cel	-40 Cel	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)		e4
SA602AD,623	NXP Semiconductors	DOUBLE BALANCED									COMPONENT					85 Cel	-40 Cel
SA631DK-T	NXP Semiconductors	DOUBLE BALANCED						20 dBm								85 Cel	-40 Cel				800 MHz	1000 MHz
TDA6403A	NXP Semiconductors		SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR						5	SSOP28,.3		RF/Microwave Mixers	85 Cel	-20 Cel
SA611DH	NXP Semiconductors	DOUBLE BALANCED						20 dBm								85 Cel	-40 Cel				800 MHz	1000 MHz
SA602AFE	NXP Semiconductors		THROUGH HOLE MOUNT	8	CERAMIC	BIPOLAR				2.8 mA		6	DIP8,.3		RF/Microwave Mixers	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)		e0
SA600D-T	NXP Semiconductors	DOUBLE BALANCED						20 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel				800 MHz	1200 MHz
SA621DK	NXP Semiconductors	DOUBLE BALANCED						20 dBm								85 Cel	-40 Cel		HIGH DYNAMIC RANGE		800 MHz	1000 MHz
NE602AFE	NXP Semiconductors		THROUGH HOLE MOUNT	8	CERAMIC	BIPOLAR				2.8 mA		6	DIP8,.3		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)		e0
SA611DK-T	NXP Semiconductors	DOUBLE BALANCED						20 dBm			COMPONENT					85 Cel	-40 Cel				800 MHz	1000 MHz
BGA2022	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm	2	8 mA	COMPONENT	2.8	TSSOP6,.08	50 ohm	RF/Microwave Mixers			Tin (Sn)	HIGH ISOLATION	e3	880 MHz	2450 MHz
NE600D-T	NXP Semiconductors	DOUBLE BALANCED						20 dBm			COMPONENT			50 ohm		70 Cel	0 Cel				800 MHz	1200 MHz
SA631DK	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY	BICMOS		20 dBm				3	SSOP20,.25		RF/Microwave Mixers	85 Cel	-40 Cel				800 MHz	1000 MHz
BGA2022T/R	NXP Semiconductors	DOUBLE BALANCED						10 dBm	2		COMPONENT			50 ohm				Tin (Sn)	HIGH ISOLATION	e3	880 MHz	2450 MHz
NE602AN	NXP Semiconductors		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				2.8 mA		6	DIP8,.3		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)		e0
934056238115	NXP Semiconductors	DOUBLE BALANCED						10 dBm	2		COMPONENT			50 ohm				Tin (Sn)	HIGH ISOLATION	e3	880 MHz	2450 MHz
BGA2021	NXP Semiconductors	DOUBLE BALANCED						3 dBm			COMPONENT			50 ohm							500 MHz	2500 MHz
NE602AD	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				2.8 mA		6	SOP8,.25		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)		e0
TFF1013HN/N1,115	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY							5	LCC16,.1X.14,20		RF/Microwave Mixers	85 Cel	-40 Cel
SA600D	NXP Semiconductors	DOUBLE BALANCED						20 dBm			COMPONENT			50 ohm		85 Cel	-40 Cel				800 MHz	1200 MHz
SA621DK-T	NXP Semiconductors	DOUBLE BALANCED						20 dBm								85 Cel	-40 Cel		HIGH DYNAMIC RANGE		800 MHz	1000 MHz
NE600D	NXP Semiconductors	DOUBLE BALANCED						20 dBm			COMPONENT			50 ohm		70 Cel	0 Cel				800 MHz	1200 MHz
BGA2022,115	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm	2	8 mA	COMPONENT	2.8	TSSOP6,.08	50 ohm	RF/Microwave Mixers			Tin (Sn)		e3	880 MHz	2450 MHz
SA611DH-T	NXP Semiconductors	DOUBLE BALANCED						20 dBm								85 Cel	-40 Cel				800 MHz	1000 MHz
TDA5745TS	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR				65 mA		5	SSOP24,.3		RF/Microwave Mixers	85 Cel	-20 Cel
SA611DK	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	20	PLASTIC/EPOXY			20 dBm			COMPONENT	3/5	SSOP20,.25		RF/Microwave Mixers	85 Cel	-40 Cel				800 MHz	1000 MHz
934063112115	NXP Semiconductors	DOUBLE BALANCED						10 dBm	2		COMPONENT			50 ohm				TIN	HIGH ISOLATION	e3	880 MHz	2450 MHz
602/BPA	NXP Semiconductors		THROUGH HOLE MOUNT	8	CERAMIC	BIPOLAR	38535Q/M;38534H;883B			4 mA		6	DIP8,.3		RF/Microwave Mixers	125 Cel	-55 Cel	Tin/Lead (Sn/Pb)		e0
TDA5744TS	NXP Semiconductors	DOUBLE BALANCED	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR				65 mA		5	SSOP24,.3		RF/Microwave Mixers	85 Cel	-20 Cel
NE602AD-T	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR				2.8 mA		6	SOP8,.25		RF/Microwave Mixers	70 Cel	0 Cel	Tin/Lead (Sn/Pb)		e0
MC13142DR2	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				26 mA		3	SOP16,.25		RF/Microwave Mixers	85 Cel	-40 Cel

RF/Microwave Mixers

RF/microwave mixers are electronic devices used in radio frequency (RF) and microwave systems to convert one frequency to another. They perform frequency translation by multiplying two input signals, a local oscillator (LO) signal and a radio frequency (RF) or intermediate frequency (IF) signal, to produce an output signal that has the sum and difference frequencies of the inputs.

RF/microwave mixers are commonly used in a variety of applications, including frequency conversion, phase detection, modulation and demodulation, and signal generation. They are widely used in telecommunications, radar systems, navigation systems, and satellite communication systems.

RF/microwave mixers are available in various types, including diode mixers, transistor mixers, and monolithic microwave integrated circuit (MMIC) mixers. The choice of mixer depends on the application requirements, such as the desired frequency range, signal bandwidth, conversion gain, and noise figure.