SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 457

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FF450R12KT4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

580 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

720 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

230 ns

SKM400GB125D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

3.85 V

UNSPECIFIED

RECTANGULAR

2

532 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

120 ns

IEC-60747-1; UL RECOGNIZED

SKM150GB12T4G

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

220 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

SKM200GB125D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

POWER CONTROL

3.85 V

UNSPECIFIED

RECTANGULAR

2

445 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e2

111 ns

UL RECOGNIZED

CM300DU-24NFH

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1900 W

300 A

UNSPECIFIED

POWER CONTROL

6.5 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

FF300R12KS4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

370 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

180 ns

SKM145GB066D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

195 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

536 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

202 ns

UL RECOGNIZED

FF200R12KS4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

275 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

FAST

NOT SPECIFIED

NOT SPECIFIED

180 ns

FF200R12KT4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

320 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

700 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

680 ns

FF300R12KT4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

450 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

720 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

230 ns

SKM100GB063D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

450 W

130 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

335 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e2

90 ns

UL RECOGNIZED

SKM100GB125DN

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

100 A

UNSPECIFIED

POWER CONTROL

3.85 V

UNSPECIFIED

RECTANGULAR

2

380 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

120 ns

IEC-60747-1; UL RECOGNIZED

FF400R06KE3HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

500 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

FF100R12RT4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

490 ns

5

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

185 ns

FF450R12KT4PHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

720 ns

7

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

230 ns

SKM400GB12T4

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

610 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

CM600DU-12NFH

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2350 W

600 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

6

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X6

1

ISOLATED

Not Qualified

e3

UL RECOGNIZED

FF450R12KE4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2400 W

520 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

325 ns

SKM100GB12T4

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

160 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

SKM100GB12T4G

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SKM300GB12T4

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

422 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

540 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

244 ns

IEC-60747-1; UL RECOGNIZED

CM150DY-12NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

590 W

150 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

FF400R12KE3HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

580 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

760 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

345 ns

SKM400GB126D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

470 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

760 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e2

380 ns

IEC-60747-1; UL RECOGNIZED

SKM195GB066D

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

265 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

569 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

228 ns

UL RECOGNIZED

CM300DY-12NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

780 W

300 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

BSM75GB120DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

625 W

75 A

UNSPECIFIED

POWER CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

2

520 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

CM200DY-12NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

650 W

200 A

UNSPECIFIED

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

FF150R12KE3GHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

225 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

830 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

CM900DU-24NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2550 W

900 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SKM200GB12T4

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

310 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

507 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

225 ns

UL RECOGNIZED

SKM300GB12E4

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

422 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

637 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

264 ns

2MBI200VA-060-50

Fujitsu

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

200 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

650 ns

CM1000DU-34NF

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

8900 W

1000 A

UNSPECIFIED

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

2

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

FF150R12RT4HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

490 ns

5

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

185 ns

FF300R12KE3HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

440 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

830 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

SKM400GB12E4

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

618 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

681 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

289 ns

FF450R12KE4PHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

325 ns

UL APPROVED

FF200R12KE4PHOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

800 ns

7

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

325 ns

UL APPROVED

FF400R12KE3B2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2000 W

580 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

2

760 ns

7

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

345 ns

CM200DU-12NFH

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

830 W

200 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

CM600DU-24NFH

Mitsubishi Electric

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

3750 W

600 A

UNSPECIFIED

POWER CONTROL

6.5 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

260

SKM400GB176DL3

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

450 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1400 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1092 ns

SKM75GB12T4

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

110 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

2MBI150VA-060-50

Fujitsu

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

2

600 ns

7

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

650 ns

BSM75GB120DN2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

520 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

SKM150GB12T4

Semikron International

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

230 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

BSM150GB120DLC

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1200 W

300 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

2

650 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.