Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
720 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
230 ns |
UL APPROVED |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2400 W |
520 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
800 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
325 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
295 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
680 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
215 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1100 W |
250 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
930 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X5 |
1 |
ISOLATED |
Not Qualified |
260 |
355 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1600 W |
460 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
800 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
325 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
780 W |
150 A |
UNSPECIFIED |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
590 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1050 W |
295 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
680 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
215 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
780 W |
200 A |
UNSPECIFIED |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
2 |
650 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
220 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1310 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
580 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
680 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
215 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
490 ns |
5 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X5 |
1 |
ISOLATED |
Not Qualified |
185 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1950 W |
370 A |
UNSPECIFIED |
3.75 V |
UNSPECIFIED |
RECTANGULAR |
2 |
590 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
1 |
ISOLATED |
Not Qualified |
FAST |
260 |
180 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
930 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
355 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1470 W |
440 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
2 |
830 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1250 W |
225 A |
UNSPECIFIED |
POWER CONTROL |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
590 ns |
7 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
800 W |
150 A |
UNSPECIFIED |
POWER CONTROL |
3.2 V |
UNSPECIFIED |
RECTANGULAR |
2 |
470 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
390 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
1200 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
555 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
490 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
1 |
ISOLATED |
Not Qualified |
260 |
185 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
2 |
640 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
205 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
110 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
740 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
550 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1250 W |
225 A |
UNSPECIFIED |
POWER CONTROL |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
590 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
310 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1400 ns |
5 |
FLANGE MOUNT |
175 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
365 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
680 W |
260 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
2 |
600 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2000 W |
580 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
760 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
345 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1040 W |
295 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
830 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
3100 W |
650 A |
UNSPECIFIED |
3.1 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1210 ns |
8 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
Matte Tin (Sn) |
UPPER |
R-XUFM-X8 |
ISOLATED |
Not Qualified |
e3 |
550 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
940 W |
400 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
2 |
600 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
4150 W |
2700 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1800 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X7 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
765 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
485 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
540 ns |
7 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
SILICON |
1000 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
30 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1600 W |
460 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
800 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
325 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1800 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1800 ns |
7 |
FLANGE MOUNT |
175 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
650 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
SILICON |
1000 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2400 W |
580 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
720 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
230 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
200 A |
UNSPECIFIED |
POWER CONTROL |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
590 ns |
7 |
FLANGE MOUNT |
125 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
180 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1450 W |
480 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
680 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
215 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2550 W |
600 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1900 ns |
8 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1700 V |
20 V |
TIN LEAD |
UPPER |
R-XUFM-X8 |
ISOLATED |
Not Qualified |
e0 |
900 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
830 W |
205 A |
UNSPECIFIED |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
2 |
480 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1600 W |
460 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
800 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
325 ns |
UL APPROVED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
2000 W |
580 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
680 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
215 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
225 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
680 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
215 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
800 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
325 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
6250 W |
4000 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1910 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X10 |
1 |
Not Qualified |
260 |
830 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
1600 W |
450 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
2 |
720 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
230 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
200 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
650 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
100 A |
2 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1000 ns |
7 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
|||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
625 W |
100 A |
UNSPECIFIED |
MOTOR CONTROL |
3.6 V |
UNSPECIFIED |
RECTANGULAR |
2 |
300 ns |
500 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
600 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
50 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.