SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 457

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
MG300J2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			300 A							2								SILICON	600 V						Not Qualified
MG50Q2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			50 A							2								SILICON	1200 V						Not Qualified
MG50J2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V			UPPER	R-PUFM-X7		Not Qualified
MG200Q2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2000 W	200 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
MG100Q2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT				SILICON	1200 V			UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG300Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1800 W	300 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns	800 ns	8	FLANGE MOUNT	Insulated Gate BIP Transistors	1800 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X8	ISOLATED	Not Qualified	HIGH SPEED			400 ns
MG25Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	250 W	25 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-PUFM-X7		Not Qualified
MG150J2YS45	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT				SILICON	600 V			UPPER	R-PUFM-X7		Not Qualified
MG300Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2700 W	300 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			170 ns
MG25J2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			25 A							2								SILICON	600 V						Not Qualified
MG150J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT			150 Cel	SILICON	600 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified				400 ns
MG75Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	600 W	75 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-PUFM-X7		Not Qualified
MG75Q2YS42	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	560 W	75 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns	800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	560 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED	400 ns
MG150Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	1250 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED	50 ns
MG100Q2YS51A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	150 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	660 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			50 ns
MG150Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	150 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	1100 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED
MG200Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1300 W	200 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	1300 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED
MG50Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED	200 ns
MG150N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	800 W	150 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		1200 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING			700 ns
MG100G2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			100 A							2								SILICON	500 V						Not Qualified
MG200Q2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT				SILICON	1200 V			UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG200J2YS21	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A							2								SILICON	600 V						Not Qualified
MG300Q2YS61	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2700 W	300 A	UNSPECIFIED	MOTOR CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			500 ns
MG600J2YS60A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		600 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT			150 Cel	SILICON	600 V			UPPER	R-XUFM-X11	ISOLATED	Not Qualified	1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
MG25J2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	125 W	25 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	UNSPECIFIED	RECTANGULAR	2	350 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V		UPPER	R-PUFM-X7		Not Qualified	HIGH SPEED
MG75H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	350 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		800 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	500 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			700 ns
MG75N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL		5 V	UNSPECIFIED	RECTANGULAR	2		1000 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1000 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING			500 ns
MG200J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT			150 Cel	SILICON	600 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified				400 ns
MG300Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2000 W	400 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	2000 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED	NOT SPECIFIED	NOT SPECIFIED	200 ns
MG100N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1200 ns	7	FLANGE MOUNT				SILICON	1000 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING			600 ns
MG25Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT		250 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED
MG75J2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			75 A							2								SILICON	600 V						Not Qualified
MG150Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	890 W	150 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified				100 ns
MG25N2YS9	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1000 ns	7	FLANGE MOUNT				SILICON	1000 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING			400 ns
MG150Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1100 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-PUFM-X7		Not Qualified
MG100Q2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	670 W	100 A	UNSPECIFIED	MOTOR CONTROL	600 ns	4 V	UNSPECIFIED	RECTANGULAR	2	500 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors	670 W	150 Cel	SILICON	1200 V	20 V	6 V	UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED
MG100H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		100 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		800 ns	7	FLANGE MOUNT				SILICON	500 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			800 ns
MG50Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	50 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-PUFM-X7		Not Qualified
MG180V2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		180 A	PLASTIC/EPOXY	MOTOR CONTROL		4.5 V	UNSPECIFIED	RECTANGULAR	2	1500 ns	400 ns	8	FLANGE MOUNT		1800 W	150 Cel	SILICON	1700 V	20 V	8 V	UPPER	R-PUFM-X8	ISOLATED	Not Qualified	HIGH SPEED			100 ns
MG200Q2YS65H	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1310 W	200 A	UNSPECIFIED	POWER CONTROL		4 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified				100 ns
MG200J2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			200 A							2								SILICON	600 V						Not Qualified
MG75J2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		75 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		500 ns	7	FLANGE MOUNT				SILICON	600 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			400 ns
MG50N2YS40	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE			50 A							2								SILICON	1000 V						Not Qualified
MG25N2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		1000 ns	7	FLANGE MOUNT				SILICON	1000 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED SWITCHING			400 ns
MG200H2YS1	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		200 A	PLASTIC/EPOXY	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	2		900 ns	7	FLANGE MOUNT				SILICON	500 V			UPPER	R-PUFM-X7	ISOLATED	Not Qualified	HIGH SPEED			850 ns
MG600J2YS61A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2770 W	600 A	UNSPECIFIED	MOTOR CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	2			11	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	20 V		UPPER	R-XUFM-X11	ISOLATED	Not Qualified
MG200Q2YS11	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1400 W	200 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	UNSPECIFIED	RECTANGULAR	2	1000 ns		7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V	20 V		UPPER	R-PUFM-X7		Not Qualified
MG150Q2YS91	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		150 A	PLASTIC/EPOXY	POWER CONTROL			UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT				SILICON	1200 V			UPPER	R-PUFM-X7		Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.