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Manufacturer | Toshiba |
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Manufacturer's Part Number | MG25Q2YS91 |
Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A; Terminal Form: UNSPECIFIED; |
Datasheet | MG25Q2YS91 Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 25 A |
Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Sub-Category: | Insulated Gate BIP Transistors |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 7 |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 250 W |
Maximum Collector-Emitter Voltage: | 1200 V |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PUFM-X7 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Maximum VCEsat: | 2.7 V |
Maximum Fall Time (tf): | 1000 ns |