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Manufacturer | Onsemi |
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Manufacturer's Part Number | FGD4536TM-F065 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Gate-Emitter Threshold Voltage: 4 V; Transistor Element Material: SILICON; |
Datasheet | FGD4536TM-F065 Datasheet |
In Stock | 1,048 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | GENERAL PURPOSE SWITCHING |
Maximum Gate-Emitter Threshold Voltage: | 4 V |
Surface Mount: | YES |
Nominal Turn Off Time (toff): | 292 ns |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 125 W |
Terminal Position: | DUAL |
Nominal Turn On Time (ton): | 26 ns |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
JEDEC-95 Code: | TO-252AA |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Maximum Collector-Emitter Voltage: | 360 V |
Maximum Gate-Emitter Voltage: | 30 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | 1.8 V |