Onsemi - FGD4536TM-F065

FGD4536TM-F065 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FGD4536TM-F065
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Gate-Emitter Threshold Voltage: 4 V; Transistor Element Material: SILICON;
Datasheet FGD4536TM-F065 Datasheet
In Stock1,048
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: GENERAL PURPOSE SWITCHING
Maximum Gate-Emitter Threshold Voltage: 4 V
Surface Mount: YES
Nominal Turn Off Time (toff): 292 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: DUAL
Nominal Turn On Time (ton): 26 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 360 V
Maximum Gate-Emitter Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.8 V
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