FGA30T65SHD by Fairchild Semiconductor | Transistors

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Manufacturer	Fairchild Semiconductor
Manufacturer's Part Number	FGA30T65SHD
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
Datasheet	FGA30T65SHD Datasheet
In Stock	248

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	60 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Turn On Time (ton):	33.4 ns
Maximum Gate-Emitter Threshold Voltage:	7.5 V
Surface Mount:	NO
Terminal Finish:	MATTE TIN
Nominal Turn Off Time (toff):	67.2 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	238 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	650 V
Additional Features:	FAST SWITCHING
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
248	-	-

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