Infineon Technologies - FS400R07A1E3

FS400R07A1E3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS400R07A1E3
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 500 A; Transistor Application: POWER CONTROL;
Datasheet FS400R07A1E3 Datasheet
In Stock395
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 500 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 580 ns
No. of Terminals: 23
Maximum Power Dissipation (Abs): 1250 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 200 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X23
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
Maximum VCEsat: 1.9 V
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