Fairchild Semiconductor - FGL60N100BNTD

FGL60N100BNTD by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FGL60N100BNTD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
Datasheet FGL60N100BNTD Datasheet
In Stock119
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 60 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 760 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 180 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 460 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Fall Time (tf): 250 ns
JEDEC-95 Code: TO-264AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1000 V
Maximum Gate-Emitter Voltage: 25 V
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