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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | FZ250R65KE3NPSA1 |
Description | Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 250 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 6500 V; No. of Elements: 1; |
Datasheet | FZ250R65KE3NPSA1 Datasheet |
In Stock | 1 |
NAME | DESCRIPTION |
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Maximum Collector Current (IC): | 250 A |
Maximum Power Dissipation (Abs): | 4800 W |
Maximum Collector-Emitter Voltage: | 6500 V |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
No. of Elements: | 1 |
Maximum Operating Temperature: | 150 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Sub-Category: | Insulated Gate BIP Transistors |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | 3.4 V |