Infineon Technologies - FZ250R65KE3NPSA1

FZ250R65KE3NPSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ250R65KE3NPSA1
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 250 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 6500 V; No. of Elements: 1;
Datasheet FZ250R65KE3NPSA1 Datasheet
In Stock1
NAME DESCRIPTION
Maximum Collector Current (IC): 250 A
Maximum Power Dissipation (Abs): 4800 W
Maximum Collector-Emitter Voltage: 6500 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 3.4 V
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