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Manufacturer | STMicroelectronics |
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Manufacturer's Part Number | STGD6NC60HDT4 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Maximum Collector Current (IC): 15 A; Maximum Operating Temperature: 150 Cel; |
Datasheet | STGD6NC60HDT4 Datasheet |
In Stock | 9,566 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 15 A |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 5.75 V |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
Nominal Turn Off Time (toff): | 222 ns |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 56 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 17.3 ns |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
JEDEC-95 Code: | TO-252AA |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 600 V |
Maximum Gate-Emitter Voltage: | 20 V |