Onsemi - FPF2C110BI07AS2

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FPF2C110BI07AS2 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FPF2C110BI07AS2
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 158 W; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 150 Cel;
Datasheet FPF2C110BI07AS2 Datasheet
In Stock827
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 40 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.1 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 152 ns
No. of Terminals: 30
Maximum Power Dissipation (Abs): 158 W
Maximum Collector-Emitter Voltage: 650 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 49 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X30
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.3 V
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