COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FP100R12KT4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP20R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

27 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

250 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

37 ns

UL APPROVED

FP40R12KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 A

UNSPECIFIED

POWER CONTROL

WIRE

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-W24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FB30R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

245 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

42 ns

FS50R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

83 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

NOT SPECIFIED

NOT SPECIFIED

185 ns

FP25R12W2T4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

685 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

133 ns

FP10R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

16 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

26 ns

F475R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

330 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FP25R12W2T4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

685 ns

35

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

133 ns

FP100R06KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

820 ns

24

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

FP20R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

27 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

250 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

37 ns

FP15R12KT3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FZ600R65KE3NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

8100 ns

9

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1200 ns

FZ1000R33HL3BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

4700 ns

7

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

2PS18012E44G40113NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

8

MICROELECTRONIC ASSEMBLY

60 Cel

SILICON

1200 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

FP25R12KT3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FZ1800R17HP4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

900 ns

FP15R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

F3L15R12W2H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

145 W

20 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

12

355 ns

34

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

67 ns

UL APPROVED

FP25R12KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

FS50R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

370 ns

18

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

UL RECOGNIZED

FP25R12W1T7B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

730 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

65 ns

FZ1800R17HP4_B29

Infineon Technologies

N-CHANNEL

COMPLEX

NO

13000 W

1800 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

3

1860 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X5

1

ISOLATED

Not Qualified

260

880 ns

FP30R06W1E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

37 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

245 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

FP75R12KE3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

105 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

330 ns

FPF2C110BI07AS2

Onsemi

N-CHANNEL

COMPLEX

NO

158 W

40 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

152 ns

30

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.1 V

UPPER

R-XUFM-X30

ISOLATED

49 ns

FS400R07A1E3_H5

Infineon Technologies

N-CHANNEL

COMPLEX

NO

750 W

500 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

6

580 ns

25

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X25

1

ISOLATED

200 ns

FP25R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

BSM50GP120

Infineon Technologies

N-CHANNEL

COMPLEX

NO

360 W

80 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

7

430 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

FB30R06W1E3_B1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

115 W

39 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

7

245 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X22

1

Not Qualified

260

42 ns

DF160R12W2H3FB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

375 ns

30

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X30

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

FS50R07W1E3B11ABOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

250 ns

18

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X18

1

ISOLATED

45 ns

BSM50GP120BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

80 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

430 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

e3

105 ns

F3L75R12W1H3B27BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

FS50R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

370 ns

15

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

250 ns

FP100R06KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

335 W

100 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

7

820 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

FP15R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

28 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

495 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL RECOGNIZED

FP25R12W2T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

39 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

520 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

MUBW15-12A7

Littelfuse

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

570 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

170 ns

CM150TX-24S1

Mitsubishi Electric

N-CHANNEL

COMPLEX

NO

935 W

150 A

PLASTIC/EPOXY

MOTOR CONTROL

200 ns

2.25 V

UNSPECIFIED

RECTANGULAR

6

300 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

1000 ns

-40 Cel

20 V

900 ns

6.6 V

TIN

UPPER

R-PUFM-X35

ISOLATED

e3

UL RECOGNIZED

FP25R12W2T4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

175 W

39 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

685 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

133 ns

FP15R12KE3GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

6PS04512E43G37986NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1200 V

UNSPECIFIED

R-XXMA-X

ISOLATED

FP50R07N2E4B11BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

UL APPROVED

FZ1500R33HL3BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

4700 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FP100R12KT4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

FS25R12YT3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

640 ns

22

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

120 ns

FZ1600R12KF4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

10000 W

1600 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

2

1050 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.