COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FZ2400R17HP4B9HOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

3

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X3

1

ISOLATED

760 ns

FP200R12N3T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

454 ns

46

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X46

ISOLATED

UL RECOGNIZED

297 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

FZ2400R12KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1050 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

700 ns

F3L15R12W2H3_B27

Infineon Technologies

N-CHANNEL

COMPLEX

NO

145 W

20 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

12

355 ns

34

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

67 ns

UL APPROVED

2PS06017E32G28213

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

MICROELECTRONIC ASSEMBLY

SILICON

UNSPECIFIED

R-XXMA-X

ISOLATED

FS15R06XL4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

135 ns

16

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X16

ISOLATED

29 ns

BSM50GP60G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

70 A

UNSPECIFIED

POWER CONTROL

2.55 V

UNSPECIFIED

RECTANGULAR

7

315 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

F3L75R12W1H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

385 ns

21

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X21

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

42 ns

UL APPROVED

FS35R12U1T4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

250 W

70 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

6

390 ns

26

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X26

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL APPROVED

F3L25R12W1T4_B27

Infineon Technologies

N-CHANNEL

COMPLEX

NO

215 W

45 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

4

375 ns

19

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X19

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

54 ns

UL APPROVED

FZ800R33KL2C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

9800 W

1500 A

UNSPECIFIED

3.65 V

UNSPECIFIED

RECTANGULAR

2

4250 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1700 ns

FZ1800R17HP4B9NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

900 ns

FZ2400R17HP4B2BOSA2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

1

ISOLATED

930 ns

FZ3600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

20000 W

4800 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

3

2100 ns

9

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X9

1

ISOLATED

1050 ns

FS30R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

355 ns

15

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

FZ1800R45HL4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1800 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

3

8060 ns

9

FLANGE MOUNT

150 Cel

SILICON

4500 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X9

ISOLATED

470 ns

IEC-60747; IEC-60749; IEC-60068

FP25R12KT4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

25 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

1

ISOLATED

Not Qualified

260

210 ns

F12-35R12KT4G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

35 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

12

620 ns

38

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X38

1

ISOLATED

Not Qualified

260

210 ns

FZ750R65KE3TNOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

8100 ns

9

FLANGE MOUNT

SILICON

6500 V

UPPER

R-XUFM-X9

ISOLATED

1200 ns

FS6R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

260 ns

15

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

26 ns

UL RECOGNIZED

FZ1500R33HL3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

4700 ns

9

FLANGE MOUNT

150 Cel

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FZ400S17K6CB2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

MATTE TIN

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3

FS15R06XL4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

81 W

20 A

UNSPECIFIED

2.55 V

UNSPECIFIED

RECTANGULAR

6

135 ns

16

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X16

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

FS30R06W1E3-B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 W

45 A

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

6

355 ns

18

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X18

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

52 ns

UL RECOGNIZED

FZ800R16KF4NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

800 A

UNSPECIFIED

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

2

1600 ns

5

FLANGE MOUNT

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1000 ns

F4-50R07W1H3_B11A

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 W

55 A

UNSPECIFIED

POWER CONTROL

1.85 V

UNSPECIFIED

RECTANGULAR

4

203 ns

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL APPROVED

FZ2400R17HP4B9HOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1800 ns

3

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X3

ISOLATED

760 ns

FZ2400R17KE3_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15500 W

3600 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

3

1900 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

900 ns

F3L200R12W2H3_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

600 W

200 A

UNSPECIFIED

POWER CONTROL

1.75 V

UNSPECIFIED

RECTANGULAR

4

480 ns

32

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

UL APPROVED

FZ2400R17KF6CB2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

19200 W

3800 A

UNSPECIFIED

3.1 V

UNSPECIFIED

RECTANGULAR

3

1690 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

Matte Tin (Sn)

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

e3

530 ns

F4-3L50R07W2H3F_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.8 V

UNSPECIFIED

RECTANGULAR

8

346 ns

34

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X34

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

FD1600/1200R17HP4_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1710 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

1

ISOLATED

650 ns

6PS04512E43G37986

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1200 V

UNSPECIFIED

R-XXMA-X

ISOLATED

FZ1500R33HL3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14500 W

1500 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

4700 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FP75R17N3E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

555 W

125 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

800 ns

35

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

305 ns

UL APPROVED

F1235R12KT4GBOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

620 ns

38

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X38

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

210 ns

UL RECOGNIZED

F4-50R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

225 W

75 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

4

370 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP25R12W2T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

380 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

56 ns

IEC-61140

FZ3600R12KE3NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

4700 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

3

1140 ns

9

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

880 ns

FZ1800R17HP4B9HOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1860 ns

9

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X9

ISOLATED

900 ns

FS3L50R07W2H3B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

346 ns

32

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

84 ns

UL APPROVED

F3L225R07W2H3P_B63

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

1.65 V

UNSPECIFIED

RECTANGULAR

4

110 ns

32

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X32

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

170 ns

FZ1600R17HP4HOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

2095 ns

3

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X3

ISOLATED

1075 ns

IFS200B12N3E4_B37

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

363 ns

41

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X41

ISOLATED

168 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

FS15R06VE3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

22 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

260 ns

13

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

FP25R12W2T4P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

520 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

47 ns

FZ800R12KS4_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

7600 W

1200 A

UNSPECIFIED

3.7 V

UNSPECIFIED

RECTANGULAR

2

660 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

225 ns

FP25R12KT4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.