COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MUBW2512T7

Littelfuse

N-CHANNEL

COMPLEX

NO

45 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

FAST SWITCHING, LOW SATURATION VOLTAGE

e3

140 ns

MUBW20-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

68 W

23 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

325 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

80 ns

MUBW10-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

85 W

20 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

260 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

80 ns

MUBW50-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

330 ns

24

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

110 ns

MUBW15-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

260 ns

24

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

80 ns

MUBW8-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

8 A

PLASTIC/EPOXY

POWER CONTROL

PIN/PEG

RECTANGULAR

7

25

FLANGE MOUNT

SILICON

600 V

PURE TIN

UPPER

R-PUFM-P25

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MUBW6-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

38 W

7 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

360 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

40 ns

MUBW40-12T7

Littelfuse

N-CHANNEL

COMPLEX

NO

220 W

62 A

UNSPECIFIED

MOTOR CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

7

610 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

e3

140 ns

UL RECOGNIZED

MUBW25-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

77 W

27.5 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

230 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

65 ns

MUBW30-12A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

30 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

570 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

180 ns

UL RECOGNIZED

MUBW50-12T8

Littelfuse

N-CHANNEL

COMPLEX

NO

80 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

140 ns

UL RECOGNIZED

MUBW15-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

61 W

18 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

325 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

80 ns

MUBW15-12T7

Littelfuse

N-CHANNEL

COMPLEX

NO

30 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

FAST SWITCHING, LOW SATURATION VOLTAGE

e3

140 ns

MUBW25-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

31 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

330 ns

25

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

110 ns

UL RECOGNIZED

MUBW30-12A6

Littelfuse

N-CHANNEL

COMPLEX

NO

104 W

31 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

7

730 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

150 ns

MUBW35-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

130 W

42 A

UNSPECIFIED

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

7

310 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

e3

100 ns

UL RECOGNIZED

MUBW25-12A7

Littelfuse

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

90 ns

MUBW10-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

45 W

11 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

325 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

80 ns

MUBW45-12T6K

Littelfuse

N-CHANNEL

COMPLEX

NO

160 W

43 A

UNSPECIFIED

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

7

610 ns

21

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X21

ISOLATED

Not Qualified

e3

140 ns

UL RECOGNIZED

MUBW75-12T8

Littelfuse

N-CHANNEL

COMPLEX

NO

110 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

340 ns

UL RECOGNIZED

MUBW100-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

410 W

125 A

UNSPECIFIED

MOTOR CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

180 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

36 ns

MUBW30-06A7

Littelfuse

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

310 ns

24

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

100 ns

VIE150-12S4

Littelfuse

N-CHANNEL

COMPLEX

NO

150 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

10

FLANGE MOUNT

950 W

150 Cel

SILICON

1200 V

UPPER

R-CUFM-X10

ISOLATED

Not Qualified

INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE

NOT SPECIFIED

NOT SPECIFIED

VIE100-12S4

Littelfuse

N-CHANNEL

COMPLEX

NO

625 W

100 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

2

10

FLANGE MOUNT

Insulated Gate BIP Transistors

625 W

150 Cel

SILICON

1200 V

UPPER

R-CUFM-X10

ISOLATED

Not Qualified

INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE

NOT SPECIFIED

NOT SPECIFIED

MG1240H-XBN2MM

Littelfuse

N-CHANNEL

COMPLEX

NO

55 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

UL RECOGNIZED

VIE125-12S4

Littelfuse

N-CHANNEL

COMPLEX

NO

125 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

10

FLANGE MOUNT

830 W

150 Cel

SILICON

1200 V

UPPER

R-CUFM-X10

ISOLATED

Not Qualified

INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE

NOT SPECIFIED

NOT SPECIFIED

VUI9-06N7

Littelfuse

N-CHANNEL

COMPLEX

NO

37 A

PLASTIC/EPOXY

POWER CONTROL

PIN/PEG

RECTANGULAR

1

390 ns

9

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-P9

ISOLATED

Not Qualified

FREE WHEELING DIODE

NOT SPECIFIED

NOT SPECIFIED

80 ns

MWI35-12T7T

Littelfuse

N-CHANNEL

COMPLEX

NO

200 W

60 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

700 ns

28

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X28

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

UL RECOGNIZED

VIE200-12S4

Littelfuse

N-CHANNEL

COMPLEX

NO

200 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

10

FLANGE MOUNT

1100 W

150 Cel

SILICON

1200 V

UPPER

R-CUFM-X10

ISOLATED

Not Qualified

INPUT LOGIC,ISOLATION,DRIVE CIRCUITRY AND PROTECTION IN A MODULE

NOT SPECIFIED

NOT SPECIFIED

MG1250W-XBN2MM

Littelfuse

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

MBPW16-06S6

Littelfuse

N-CHANNEL

COMPLEX

NO

32 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

RECTANGULAR

7

290 ns

25

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-P25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

MUEW15-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

PIN/PEG

RECTANGULAR

7

25

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-P25

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MG1225H-XBN2MM

Littelfuse

N-CHANNEL

COMPLEX

NO

40 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

MG1215H-XBN2MM

Littelfuse

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

MOTOR CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

MG1275W-XBN2MM

Littelfuse

N-CHANNEL

COMPLEX

NO

105 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X24

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

340 ns

MIXA30WB1200TED

Littelfuse

N-CHANNEL

COMPLEX

NO

150 W

43 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MIXA20WB1200TML

Littelfuse

N-CHANNEL

COMPLEX

NO

100 W

28 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MIXA60WB1200TEH

Littelfuse

N-CHANNEL

COMPLEX

NO

290 W

85 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MIXA10WB1200TML

Littelfuse

N-CHANNEL

COMPLEX

NO

63 W

17 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MIXA80WB1200TEH

Littelfuse

N-CHANNEL

COMPLEX

NO

390 W

120 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MIXA10WB1200TED

Littelfuse

N-CHANNEL

COMPLEX

NO

60 W

17 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MIXA40WB1200TED

Littelfuse

N-CHANNEL

COMPLEX

NO

195 W

60 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

UL RECOGNIZED

MMIX4B12N300

Littelfuse

N-CHANNEL

COMPLEX

YES

100 W

22 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

GULL WING

RECTANGULAR

4

705 ns

9

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

20 V

DUAL

R-PDSO-G9

ISOLATED

460 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.