COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FS25R12W1T7P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

6

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

74 ns

FP150R12KT4PBPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

FS20R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

320 ns

15

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

57 ns

FP10R12KE3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

481 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

80 ns

F475R07W1H3B11ABOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

275 W

75 A

UNSPECIFIED

POWER CONTROL

1.85 V

UNSPECIFIED

RECTANGULAR

4

213 ns

20

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL APPROVED

FP15R12W1T4P_B11ENG

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

510 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X23

ISOLATED

130 ns

FZ1200R17HE4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

1760 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

955 ns

FP100R07N3E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

370 ns

43

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

100 ns

FP50R12KT4G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

630 ns

35

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

107 ns

FP50R06KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

190 W

60 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

7

760 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

FP50R12N2T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

400 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

UL RECOGNIZED

102 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

6MS24017P43W39873

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

FZ1200R12KL4C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

7800 W

1900 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

2

1290 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

750 ns

FS20R06VE3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

WIRE

RECTANGULAR

6

250 ns

13

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-W13

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

320 ns

FZ1000R33HL3BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

9600 W

1000 A

UNSPECIFIED

2.4 V

UNSPECIFIED

RECTANGULAR

2

4700 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FP50R07U1E4BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

274 ns

23

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

40 ns

UL APPROVED

FD300R07PE4_B6

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

660 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

170 ns

FP50R06W2E3B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

65 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

355 ns

23

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FP35R12KT4-B15

Infineon Technologies

N-CHANNEL

COMPLEX

NO

210 W

130 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

7

620 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X24

1

Not Qualified

260

210 ns

FZ1200R12HP4HOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

4930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

1550 ns

9

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X9

ISOLATED

890 ns

FP50R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

270 W

75 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

610 ns

35

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X35

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

FS75R12W2T4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

375 W

107 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

6

490 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

185 ns

FZ1200R12HE4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1825 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

2

1130 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

660 ns

FP150R12KT4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

FS20R06VE3B2BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

250 ns

15

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X15

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

32 ns

UL RECOGNIZED

FP50R07N2E4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP35R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

54 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

510 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FZ1200R45HL3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

PLASTIC/EPOXY

POWER CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

3

6670 ns

9

FLANGE MOUNT

150 Cel

SILICON

4500 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

660 ns

FP50R12KT4_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

50 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

FP50R12KT4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

280 W

50 A

UNSPECIFIED

2.25 V

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

1

ISOLATED

Not Qualified

260

210 ns

FZ1200R17KF6C_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

2600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1360 ns

7

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

490 ns

FS75R12W2T4B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

107 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

490 ns

18

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X18

NOT SPECIFIED

NOT SPECIFIED

185 ns

FP35R12W2T4PB11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

54 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

510 ns

35

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP10R12W1T4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

105 W

20 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP15R12W1T7_B3

Infineon Technologies

N-Channel

COMPLEX

NO

15 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

343 ns

20

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X20

ISOLATED

35 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

FP150R12KT4B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

750 ns

43

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

270 ns

UL RECOGNIZED

6MS20017E43W38170NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

F3L300R07PE4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

1.75 V

UNSPECIFIED

RECTANGULAR

4

610 ns

21

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

FP10R12YT3B4BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

16 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

540 ns

23

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

70 ns

FZ1200R17HP4NPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1810 ns

4

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

960 ns

FP15R12W1T7P_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

15 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

343 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

35 ns

IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED

FS20R06VE3_B2

Infineon Technologies

N-CHANNEL

COMPLEX

NO

71.5 W

25 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

250 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

32 ns

FP10R12W1T7

Infineon Technologies

N-CHANNEL

COMPLEX

NO

10 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

351 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

37 ns

IEC-60747; IEC-60749; IEC60068; IEC-61140

F12-25R12KT4G

Infineon Technologies

N-CHANNEL

COMPLEX

NO

160 W

25 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

12

470 ns

38

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X38

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

FS50R12W1T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

50 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

380 ns

15

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X15

ISOLATED

86 ns

IEC-61140

FS50R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

205 W

70 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

6

370 ns

15

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X15

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

250 ns

FP10R12W1T4P

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

7

500 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

108 ns

FP100R07N3E4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

370 ns

43

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X43

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

100 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.