Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
6 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
74 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
750 ns |
43 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X43 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
270 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
320 ns |
15 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
57 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
15 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
481 ns |
23 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
275 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
1.85 V |
UNSPECIFIED |
RECTANGULAR |
4 |
213 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
UL APPROVED |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
510 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
130 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1760 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
955 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
370 ns |
43 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X43 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
630 ns |
35 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
107 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
190 W |
60 A |
UNSPECIFIED |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
7 |
760 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
50 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
400 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
UL RECOGNIZED |
102 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
12 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
SILICON |
1700 V |
-25 Cel |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
|||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
7800 W |
1900 A |
UNSPECIFIED |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1290 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
750 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
WIRE |
RECTANGULAR |
6 |
250 ns |
13 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-W13 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
320 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
9600 W |
1000 A |
UNSPECIFIED |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
2 |
4700 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3300 V |
20 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
1050 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
75 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
274 ns |
23 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
UL APPROVED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
660 ns |
20 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
65 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
355 ns |
23 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
210 W |
130 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X24 |
1 |
Not Qualified |
260 |
210 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
4930 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
1550 ns |
9 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
890 ns |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
270 W |
75 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
610 ns |
35 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
135 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
375 W |
107 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
6 |
490 ns |
15 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
185 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
1825 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
2 |
1130 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
660 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
750 ns |
43 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.35 V |
UPPER |
R-XUFM-X43 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
270 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
250 ns |
15 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
7 |
265 ns |
31 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
54 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
510 ns |
23 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
UNSPECIFIED |
RECTANGULAR |
3 |
6670 ns |
9 |
FLANGE MOUNT |
150 Cel |
SILICON |
4500 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
660 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
280 W |
50 A |
UNSPECIFIED |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
280 W |
50 A |
UNSPECIFIED |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
1 |
ISOLATED |
Not Qualified |
260 |
210 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
2600 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1360 ns |
7 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
490 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
107 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
490 ns |
18 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X18 |
NOT SPECIFIED |
NOT SPECIFIED |
185 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
54 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
510 ns |
35 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
105 W |
20 A |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
COMPLEX |
NO |
15 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
343 ns |
20 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
35 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
750 ns |
43 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-XUFM-X43 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
270 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
12 |
MICROELECTRONIC ASSEMBLY |
150 Cel |
SILICON |
1700 V |
UNSPECIFIED |
R-XXMA-X |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
1.75 V |
UNSPECIFIED |
RECTANGULAR |
4 |
610 ns |
21 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
16 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
540 ns |
23 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
70 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
1200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
1810 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
960 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
15 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
343 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
35 ns |
IEC-60747, 60749, 60068; IEC-61140; UL RECOGNIZED |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
71.5 W |
25 A |
UNSPECIFIED |
2 V |
UNSPECIFIED |
RECTANGULAR |
6 |
250 ns |
15 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
10 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
351 ns |
23 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
37 ns |
IEC-60747; IEC-60749; IEC60068; IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
160 W |
25 A |
UNSPECIFIED |
POWER CONTROL |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
12 |
470 ns |
38 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X38 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
50 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
6 |
380 ns |
15 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
86 ns |
IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
205 W |
70 A |
UNSPECIFIED |
POWER CONTROL |
1.9 V |
UNSPECIFIED |
RECTANGULAR |
6 |
370 ns |
15 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X15 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
2.25 V |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
108 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
370 ns |
43 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X43 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.