FZ1200R12HE4P by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FZ1200R12HE4P
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1825 A; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
Datasheet	FZ1200R12HE4P Datasheet
In Stock	332

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1825 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	1130 ns
No. of Terminals:	7
Terminal Position:	UPPER
Nominal Turn On Time (ton):	660 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
332	-	-

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