Infineon Technologies - FS150R12KT4B11BOSA1

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FS150R12KT4B11BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS150R12KT4B11BOSA1
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Nominal Turn Off Time (toff): 605 ns; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
Datasheet FS150R12KT4B11BOSA1 Datasheet
In Stock8
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 605 ns
No. of Terminals: 35
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 165 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X35
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Reference Standard: UL RECOGNIZED
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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