COMPLEX Insulated Gate Bipolar Transistors (IGBT) 859

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FP40R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

200 W

55 A

UNSPECIFIED

POWER CONTROL

2.3 V

WIRE

RECTANGULAR

7

610 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-W24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

FZ1200R33KL2C

Infineon Technologies

N-CHANNEL

COMPLEX

NO

14500 W

2300 A

UNSPECIFIED

3.65 V

UNSPECIFIED

RECTANGULAR

3

4250 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X9

1

ISOLATED

Not Qualified

1700 ns

FP50R12KT4BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

7

620 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

BSM15GP60BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

400 ns

24

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

140 ns

FP50R07N2E4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

1.95 V

UNSPECIFIED

RECTANGULAR

7

265 ns

31

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

43 ns

FP100R12W3T7_B11

Infineon Technologies

N-CHANNEL

COMPLEX

NO

100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

442 ns

31

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X31

ISOLATED

217 ns

IEC-60747; IEC-60749; IEC-60068; IEC-61140

FP15R12NT3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

105 W

25 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

7

650 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

F475R07W2H3B51BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

75 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

300 ns

28

FLANGE MOUNT

SILICON

650 V

-40 Cel

UPPER

R-XUFM-X28

ISOLATED

45 ns

UL APPROVED

F3L300R07PE4

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

600 ns

20

FLANGE MOUNT

SILICON

650 V

UPPER

R-XUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

FP10R12KE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

55 W

15 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

7

481 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

80 ns

FZ1200R33HE3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

11000 W

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

3550 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X3

1

ISOLATED

Not Qualified

260

1150 ns

MIG25Q906HA

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG50J904H

Toshiba

N-CHANNEL

COMPLEX

NO

50 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

7

500 ns

17

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN LEAD

DUAL

R-PDFM-P17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

150 ns

MIG30J906HA

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

250 ns

MIG15Q906HA

Toshiba

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG20J906H

Toshiba

N-CHANNEL

COMPLEX

NO

20 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

TIN LEAD

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

e0

250 ns

MG1200FXF1US51

Toshiba

N-CHANNEL

COMPLEX

NO

4000 W

1200 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

3

4000 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

2100 ns

MIG25Q906H

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG30J806HA

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

250 ns

MIG20J901H

Toshiba

N-CHANNEL

COMPLEX

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MIG50J806H

Toshiba

N-CHANNEL

COMPLEX

NO

200 W

75 A

UNSPECIFIED

MOTOR CONTROL

2.8 V

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

300 ns

MIG20J951H

Toshiba

N-CHANNEL

COMPLEX

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MIG150J201H

Toshiba

N-CHANNEL

COMPLEX

NO

150 A

PLASTIC/EPOXY

MOTOR CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

24

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X24

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MIG30J901H

Toshiba

N-CHANNEL

COMPLEX

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MIG30J806H

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

250 ns

MIG15Q901H

Toshiba

N-CHANNEL

COMPLEX

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MIG15Q904H

Toshiba

N-CHANNEL

COMPLEX

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

7

600 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN LEAD

DUAL

R-PDFM-P17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

150 ns

MG150J7KS60

Toshiba

N-CHANNEL

COMPLEX

NO

150 A

UNSPECIFIED

MOTOR CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

7

26

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X26

ISOLATED

Not Qualified

MIG30J906H

Toshiba

N-CHANNEL

COMPLEX

NO

35 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

500 ns

24

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

250 ns

MG150J7KS50

Toshiba

N-CHANNEL

COMPLEX

NO

320 W

150 A

PLASTIC/EPOXY

MOTOR CONTROL

300 ns

2.8 V

UNSPECIFIED

RECTANGULAR

7

500 ns

22

FLANGE MOUNT

Insulated Gate BIP Transistors

320 W

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

UPPER

R-PUFM-X22

ISOLATED

Not Qualified

HIGH SPEED

e0

MIG25Q904H

Toshiba

N-CHANNEL

COMPLEX

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

PIN/PEG

RECTANGULAR

7

600 ns

17

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN LEAD

DUAL

R-PDFM-P17

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

e0

150 ns

MIG15Q906H

Toshiba

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

MOTOR CONTROL

PIN/PEG

RECTANGULAR

6

600 ns

24

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-P24

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

MIG50J901H

Toshiba

N-CHANNEL

COMPLEX

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MIG25Q901H

Toshiba

N-CHANNEL

COMPLEX

NO

25 A

PLASTIC/EPOXY

POWER CONTROL

SOLDER LUG

RECTANGULAR

7

12

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-D12

Not Qualified

3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE

MBN1200E33D

Renesas Electronics

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

3000 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

2400 ns

MBL800D33C

Renesas Electronics

N-CHANNEL

COMPLEX

NO

800 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

3500 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

2900 ns

MBN1200D25B

Renesas Electronics

N-CHANNEL

COMPLEX

NO

12000 W

1200 A

UNSPECIFIED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

3

4400 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

2500 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

2700 ns

MBN1200D33C

Renesas Electronics

N-CHANNEL

COMPLEX

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

3

3500 ns

9

FLANGE MOUNT

SILICON

3300 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

HIGH RELIABILITY

2900 ns

MUBW50-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

250 W

75 A

UNSPECIFIED

MOTOR CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

7

330 ns

20

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X20

ISOLATED

Not Qualified

e3

110 ns

UL RECOGNIZED

MUBW35-06A6

Littelfuse

N-CHANNEL

COMPLEX

NO

104 W

38 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

220 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

65 ns

MUBW35-12A8

Littelfuse

N-CHANNEL

COMPLEX

NO

225 W

50 A

UNSPECIFIED

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

7

570 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

170 ns

UL RECOGNIZED

MUBW75-06A8

Littelfuse

N-CHANNEL

COMPLEX

NO

320 W

100 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

6

490 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

210 ns

UL RECOGNIZED

MUBW15-12A6

Littelfuse

N-CHANNEL

COMPLEX

NO

70 W

18 A

UNSPECIFIED

POWER CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

7

770 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

FAST

e3

120 ns

MUBW50-17T8

Littelfuse

N-CHANNEL

COMPLEX

NO

290 W

74 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

980 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

300 ns

UL RECOGNIZED

MUBW15-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

75 W

12 A

UNSPECIFIED

POWER CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

7

200 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

MATTE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

30 ns

MUBW20-06A6K

Littelfuse

N-CHANNEL

COMPLEX

NO

85 W

12 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

165 ns

25

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

PURE TIN

UPPER

R-XUFM-X25

ISOLATED

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

30 ns

MUBW75-17T8

Littelfuse

N-CHANNEL

COMPLEX

NO

450 W

113 A

UNSPECIFIED

POWER CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

7

1350 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

360 ns

UL RECOGNIZED

MUBW50-12A8

Littelfuse

N-CHANNEL

COMPLEX

NO

350 W

85 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

7

570 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

170 ns

UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.