Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
200 W |
55 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
WIRE |
RECTANGULAR |
7 |
610 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-W24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
140 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
14500 W |
2300 A |
UNSPECIFIED |
3.65 V |
UNSPECIFIED |
RECTANGULAR |
3 |
4250 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3300 V |
20 V |
UPPER |
R-XUFM-X9 |
1 |
ISOLATED |
Not Qualified |
1700 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
7 |
620 ns |
23 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
210 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
100 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
400 ns |
24 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
140 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
70 A |
UNSPECIFIED |
POWER CONTROL |
1.95 V |
UNSPECIFIED |
RECTANGULAR |
7 |
265 ns |
31 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
100 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
7 |
442 ns |
31 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
UPPER |
R-XUFM-X31 |
ISOLATED |
217 ns |
IEC-60747; IEC-60749; IEC-60068; IEC-61140 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
105 W |
25 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
7 |
650 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
85 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
75 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
300 ns |
28 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
UPPER |
R-XUFM-X28 |
ISOLATED |
45 ns |
UL APPROVED |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
4 |
600 ns |
20 |
FLANGE MOUNT |
SILICON |
650 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
190 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
55 W |
15 A |
UNSPECIFIED |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
7 |
481 ns |
23 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X23 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
80 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
COMPLEX |
NO |
11000 W |
1200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
3550 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
3300 V |
20 V |
UPPER |
R-XUFM-X3 |
1 |
ISOLATED |
Not Qualified |
260 |
1150 ns |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
50 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
7 |
500 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN LEAD |
DUAL |
R-PDFM-P17 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
150 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
20 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN LEAD |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
e0 |
250 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
4000 W |
1200 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
4000 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
3300 V |
20 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
2100 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
24 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
250 ns |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
200 W |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
2.8 V |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
300 ns |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
150 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
7 |
24 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X24 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
|||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
24 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
250 ns |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
7 |
600 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
TIN LEAD |
DUAL |
R-PDFM-P17 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
150 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
150 A |
UNSPECIFIED |
MOTOR CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
7 |
26 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X26 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
35 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
500 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
320 W |
150 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
300 ns |
2.8 V |
UNSPECIFIED |
RECTANGULAR |
7 |
500 ns |
22 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
320 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
TIN LEAD |
UPPER |
R-PUFM-X22 |
ISOLATED |
Not Qualified |
HIGH SPEED |
e0 |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
7 |
600 ns |
17 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
TIN LEAD |
DUAL |
R-PDFM-P17 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
150 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
PIN/PEG |
RECTANGULAR |
6 |
600 ns |
24 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-P24 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
SOLDER LUG |
RECTANGULAR |
7 |
12 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-D12 |
Not Qualified |
3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE |
||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
1200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
3000 ns |
9 |
FLANGE MOUNT |
SILICON |
3300 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW NOISE |
2400 ns |
|||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
800 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
2 |
3500 ns |
9 |
FLANGE MOUNT |
SILICON |
3300 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW NOISE |
2900 ns |
|||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
12000 W |
1200 A |
UNSPECIFIED |
POWER CONTROL |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
3 |
4400 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
2500 V |
20 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW NOISE |
2700 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
COMPLEX |
NO |
1200 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
3 |
3500 ns |
9 |
FLANGE MOUNT |
SILICON |
3300 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
2900 ns |
|||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
250 W |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
7 |
330 ns |
20 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X20 |
ISOLATED |
Not Qualified |
e3 |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
104 W |
38 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
7 |
220 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
FAST |
e3 |
65 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
225 W |
50 A |
UNSPECIFIED |
POWER CONTROL |
3.1 V |
UNSPECIFIED |
RECTANGULAR |
7 |
570 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
170 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
320 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
6 |
490 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
210 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
70 W |
18 A |
UNSPECIFIED |
POWER CONTROL |
2.9 V |
UNSPECIFIED |
RECTANGULAR |
7 |
770 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
FAST |
e3 |
120 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
290 W |
74 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
7 |
980 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1700 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
300 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
75 W |
12 A |
UNSPECIFIED |
POWER CONTROL |
2.9 V |
UNSPECIFIED |
RECTANGULAR |
7 |
200 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
MATTE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
e3 |
30 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
85 W |
12 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
7 |
165 ns |
25 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
600 V |
20 V |
PURE TIN |
UPPER |
R-XUFM-X25 |
ISOLATED |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
450 W |
113 A |
UNSPECIFIED |
POWER CONTROL |
2.4 V |
UNSPECIFIED |
RECTANGULAR |
7 |
1350 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1700 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
360 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
COMPLEX |
NO |
350 W |
85 A |
UNSPECIFIED |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
7 |
570 ns |
24 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
1200 V |
20 V |
MATTE TIN OVER NICKEL |
UPPER |
R-XUFM-X24 |
ISOLATED |
Not Qualified |
e3 |
170 ns |
UL RECOGNIZED |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.