Infineon Technologies - F475R07W2H3B51BOMA1

FGB20N60SFD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 208W Ptot. Ideal for power control applications due to its fast tr of 21ns and tf of 43ns. AEC-Q101 certified for automotive use, it features a small outline package style.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 250 A; Nominal Turn Off Time (toff): 1210 ns; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 735 W; Maximum Collector Current (IC): 160 A; Transistor Element Material: SILICON;

FB30R06W1E3_B1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements and a max VCEsat of 2V. It is designed for power control applications, offering a nominal turn off time of 245ns and a max collector-emitter voltage of 600V. With a package style of FLANGE MOUNT, it can handle up to 115W power dissipation at a max operating temperature of 175°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 3.5 V;

IKQ75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 454ns and turn-on time of 81ns, this transistor operates from -40°C temperature range.

IRG4PH20KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 1200V and Max Power Dissipation of 24W. It is designed for POWER CONTROL applications, featuring a Nominal Turn Off Time of 720ns and Max Fall Time of 400ns. Ideal for high-power systems requiring efficient switching capabilities.

IXGH24N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 50A max collector current, and 250W max power dissipation. Ideal for power control applications, it has a single configuration and operates at up to 150°C.

Insulated Gate Bipolar Transistors;

STGW25M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with 375W power dissipation, 1200V collector-emitter voltage, and 50A collector current. It operates up to 175°C and has a gate-emitter threshold voltage of 7V. Ideal for high-power applications in industrial electronics.

IGB50N60TXT by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. This insulated gate bipolar transistor comes in a surface-mount package with GULL WING terminals, suitable for high-power electronic systems operating at temperatures up to 175°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 220 A; Package Body Material: PLASTIC/EPOXY; Case Connection: ISOLATED;

IXXH50N60B3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and a max operating temperature of 175°C.

IXXX160N65C4 by Littelfuse is an N-CHANNEL IGBT with 940W power dissipation, 650V collector-emitter voltage, and 290A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 50 ns; Maximum Gate-Emitter Threshold Voltage: 7.7 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; JESD-30 Code: R-XUFM-X7; Package Style (Meter): FLANGE MOUNT;

IRGB4061DPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a power dissipation of 206W and is ideal for power control applications due to its single configuration with built-in diode. With fast rise and fall times of 35ns, it offers efficient switching performance in various industrial settings.

FP35R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn-off time of 620ns. It is used in applications requiring high power switching capabilities at up to 150°C operating temperature. The transistor's silicon material and complex configuration make it suitable for various industrial uses.