FZ1200R33HE3 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FZ1200R33HE3
Description	N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 11000 W; Maximum Collector Current (IC): 1200 A; JESD-30 Code: R-XUFM-X3;
Datasheet	FZ1200R33HE3 Datasheet
In Stock	52

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	1200 A
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	3550 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	11000 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	1150 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X3
No. of Elements:	3
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	3300 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
52	$776.120	$40,358.240

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